Enhanced lifetime in porous silicon light-emitting diodes with fluorine doped tin oxide electrodes

Thin Solid Films

Volumn 517, Issue 2, 2008, Pages 870-873

  Macedo, Andréia G ^a   de Vasconcelos, Elder A ^c   Valaski, Rogério ^b   Muchenski, Fábio ^a   da Silva Jr , Eronides F ^c   da Silva, Antônio F ^d   Roman, Lucimara S ^a  

^a FEDERAL UNIVERSITY OF PARANÁ   (Brazil)

^b Flexitec Eletrônica Orgânica Ltda   (Brazil)

^c FEDERAL UNIVERSITY OF PERNAMBUCO   (Brazil)

^d FEDERAL UNIVERSITY OF BAHIA   (Brazil)

Author keywords

Fluorine doped tin oxide; Light emitting diodes; Photoluminescence; Porous silicon

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; DIODES; ELECTROLUMINESCENCE; INDIUM COMPOUNDS; LIGHT; LIGHT EMITTING DIODES; METALS; MOS DEVICES; NANOCOMPOSITES; OPTICAL PROPERTIES; OXIDE SEMICONDUCTORS; PHOTOLUMINESCENCE; TIN OXIDES; TRANSPARENT ELECTRODES;

BENEFICIAL EFFECTS; CARRIER INJECTION; ELECTRICAL AND OPTICAL PROPERTIES; FLUORINATED TIN OXIDES; FLUORINE DOPED TIN OXIDE; INDIUM TIN OXIDE ELECTRODES; SILICON LIGHT EMITTING DIODES; SPACE-CHARGE LIMITED;

POROUS SILICON;

EID: 55049111753     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2008.07.007     Document Type: Article

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