SCOPUS 정보 검색 플랫폼

Semiconductor Science and Technology

Volumn 14, Issue 11, 1999, Pages

Tin oxide growth in nanoporous silicon: an approach to an efficient solid state electrode

(6) Roger, J A a Blanchin, M G a Canut, B a Teodorescu, V S a,c Letant, S b Vial, J C b

a UNIVERSITÉ LYON 1 (France)

b LIPHY (France)

c NATIONAL INSTITUTE OF MATERIALS PHYSICS (Romania)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRODES; NANOSTRUCTURED MATERIALS; PHOTOLUMINESCENCE; POROSITY; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING TIN COMPOUNDS; SEMICONDUCTOR GROWTH; SOL-GELS; TRANSMISSION ELECTRON MICROSCOPY;

NANOPOROUS SILICON; SOLID STATE ELECTRODE; TIN OXIDE;

POROUS SILICON;

EID: 0033356010 PISSN: 02681242 EISSN: None Source Type: Journal
DOI: 10.1088/0268-1242/14/11/101 Document Type: Article

Times cited : (6)

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