Electronic properties of thin Au/nanoporous-Si/n-Si structures

Thin Solid Films

Volumn 276, Issue 1-2, 1996, Pages 183-186

  Dittrich, Th ^a   Kliefoth, K ^a   Sieber, I ^a   Rappich, J ^a   Rauscher, S ^a   Timoshenko, V Yu ^b  

^a HAHN MEITNER INSTITUT   (Germany)

^b MOSCOW STATE UNIVERSITY   (Russian Federation)

Author keywords

Electrochemistry; Nanostructures; Silicon; Surface and interface states

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENT MEASUREMENT; ELECTROCHEMISTRY; ELECTROLUMINESCENCE; ELECTRONIC PROPERTIES; GOLD; INTERFACES (MATERIALS); NANOSTRUCTURED MATERIALS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING SILICON; THERMAL EFFECTS; VOLTAGE MEASUREMENT;

FIELD EMISSION SCANNING ELECTRON MICROSCOPY; INTERFACE STATE DENSITY; ULTRATHIN NANOPOROUS SILICON LAYERS (UPSL);

POROUS SILICON;

EID: 0030120402     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/0040-6090(95)08087-2     Document Type: Article

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