Predictive simulation of AlGaN/GaN HEMTs

Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC

Volumn , Issue , 2007, Pages 112-115

  Vitanov, S ^a   Palankovski, V ^a   Murad, S ^c   Rodle T ^c   Quay, R ^d   Selberherr, S ^b  

^a VIENNA UNIVERSITY OF TECHNOLOGY   (Austria)

^b INSTITUTE FOR MICROELECTRONICS   (Austria)

^c NXP SEMICONDUCTORS   (Netherlands)

^d FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC COMPOUNDS; COMPUTER SOFTWARE; ELECTRIC CONDUCTIVITY; ELECTRON MOBILITY; GALLIUM NITRIDE; INTEGRATED CIRCUITS; SEMICONDUCTOR MATERIALS;

ALGAN GAN; COMPOUND SEMICONDUCTOR (CS); DC AND AC SIMULATION; DEVICE SIMULATORS; EXPERIMENTAL DATA; HIGH-ELECTRON-MOBILITY (HEM); MEASUREMENT RESULTS; NEW GENERATION; PREDICTIVE SIMULATIONS; SCALED DEVICES; SOFTWARE TOOLS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 47349096596     PISSN: 15508781     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/CSICS07.2007.31     Document Type: Conference Paper

References (14)

1. Y.F. Wu, B.P. Keller, P. Fini, S. Keller, T.J. Jenkins, L.T. Kehias, S.P. Denbaars, and U.K. Mishra, "High Al-Content AlGaN/GaN MODFET's for Ultrahigh Performance", IEEE Electron Dev. Lett., vol. 19, pp. 50-53, Feb. 1998.
2. Y.F. Wu, M. Moore, A. Saxler, M. Moore, T. Wisleder, and P. Parikh, "40-W/mm Double Field-Plated GaN HEMTs", in Proc. 64th IEEE Device Research Conf., State College, PA, USA, pp. 151-152, June 2006.
3. Institut für Mikroelektronik, Technische Universität Wien. (2002) Minimos-NT Device and Circuit Simulator, User's Guide, Release 2.0., http://www.iue.tuwien.ac.at/software/minimos-nt.
4. V. Palankovski, R. Quay, and S. Selberherr, "Industrial Application of Heterostructure Device Simulation", IEEE J. Solid-State Circuits, vol. 36, no. 9, pp. 1365-1370, (invited), Sept. 2001.
5. V. Palankovski and R. Quay, Analysis and Simulation of Heterostructure Devices. Wien, New York: Springer, 2004.
6. S. Vitanov, V. Palankovski, R. Quay, and E. Langer, "Modeling of Electron Transport in GaN-based Materials and Devices", in 28th Intl.Conf. on the Physics of Semiconductors, p. 244, July 2006.
7. V. Palankovski, S. Vitanov, and R. Quay, "Field-Plate Optimization of AlGaN/GaN HEMTs", in Tech.Dig. IEEE Compound Semiconductor IC Symp., pp. 107-110, Nov. 2006.
8. V. Palankovski, A. Marchlewski, E. Ungersböck, and S. Selberherr, "Identification of Transport Parameters for Gallium Nitride Based Semiconductor Devices", in Proc. 5th MATHMOD, CDROM, Vienna, pp. 14-1-14-9, Feb. 2006.
9. W. Hänsch, M. Orlowski, and W. Weber, "The Hot-Electron Problem in Submicron MOSFET", 18th ESSDERC, pp. 597-606, Sep. 1988.
10. S. Vitanov, V. Palankovski, S. Murad, T. Rödle, R. Quay, and S. Selberherr, "Hydrodynamic Modeling of AlGaN/GaN HEMTs", in Proc. Intl.Conf. on Simulation of Semiconductor Processes and Devices, Wien - New York, Springer, pp. 273-276, Sep. 2007.
11. O. Ambacher, B. Foutz, J. Smart, J.R. Shealy, N.G. Weimann, K. Chu, M. Murphy, A.J. Sierakowski, W.J. Schaff, L.F. Eastman, R. Dimitrov, A. Mitchell, and M. Stutzmann, "Two-Dimensional Electron Gases Induced by Spontaneous and Piezoelectric Polarization in Undoped and Doped AlGaN/GaN Heterostructures", in J. Appl. Phys. , vol. 87, pp. 334-344, Jan. 2000.
12. D. Jena, I. Smorchkova, A.C. Gossard, and U.K. Mishra, "Electron Transport in III-V Nitride Two-Dimensional Electron Gases", in Phys. Stat. Sol. B, vol. 228, pp. 617-619, Jan. 2001.
13. I. Smorchkova, C.R. Elsass, J.P. Ibbetson, R. Vetury, B. Heying, P. Fini, E. Haus, S.P. DenBaars, J.S. Speck, and U.K. Mishra, "Polarization Induced Charge and Electron Mobility in AlGaN/GaN Heterostructures Grown by Plasma-Assisted Molecular-Beam Epitaxy", in J. Appl. Phys., vol. 86, pp. 4520-4526, Oct. 1999.
14. B. Jogai, "Influence of Surface States on the Two-Dimensional Electron Gas in AlGaN/GaN Heterojunction Field-Effect Transistors", in J. Appl. Phys., vol. 93, pp. 1631-1635, 2003.