Modeling of electron transport in GaN-based materials and devices

AIP Conference Proceedings

Volumn 893, Issue , 2007, Pages 1399-1400

  Vitanov, S ^a   Palankovski, V ^a   Quay, R ^b   Langer, E ^a  

^a INSTITUTE FOR MICROELECTRONICS   (Austria)

^b FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

Author keywords

GaN; HFMT; Modeling

Indexed keywords

EID: 55049138176     PISSN: 0094243X     EISSN: 15517616     Source Type: Conference Proceeding    
DOI: 10.1063/1.2730427     Document Type: Conference Paper

References (7)

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