Dependence of the Au/AlGaN Schottky characteristics on Al content

Physica Scripta T

Volumn 101, Issue , 2002, Pages 230-233

  Seghier, D ^a   Gislason, H P ^a  

^a UNIVERSITY OF ICELAND   (Iceland)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CURRENT VOLTAGE CHARACTERISTICS; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRONS; EVAPORATION; INTERFACES (MATERIALS); METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING ALUMINUM COMPOUNDS; SURFACE ROUGHNESS;

ELECTRON CONCENTRATION;

SCHOTTKY BARRIER DIODES;

EID: 0036441595     PISSN: 02811847     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (13)

1. Asif Khan, M., Shur, M.S. and Chen, Q., Appl. Phys. Lett. 68, 3022 (1996).
2. Wu, J.F. et al. Solid-State Eletron. 41, 1569 (1997).
3. Mohney, S.E. and Lau, S.S., in "GAN and related Materials II", (edited by S.J. Pearton), (Golden and Breach, New York, 1998), p. 113.
4. Rezaul, M. et al., Solid-State Eletron. 41, 287 (1997).
5. Zhou, L., Ping, A.T., Boutros, K., Redwing, J. and Adesida, I., Electron. Lett. 35, 745 (1999).
6. Qiao, D., Yu, L.S. and Lau, S.S., J. Appl. Phys. 87, 801 (2000).
7. Werner, J.H., in "Metalization and Metal-Semiconductor Interfaces", (edited by I.P. Batra), (Plenum, New York, 1989), p. 235.
8. Card, H.C. and Rhoderick, E.H., J. Phys. D4, 1589 (1971).
9. Rideout, V.L. and Crowell, C.R. Solid-St. Electron. 13, 993 (1970).
10. Rhoderick, E.H. and Williams, R.W., in "Metal-Semicondor Contacts", 2nd edition, (Clarendon, Oxford), p. 113.
11. Sze, S.M., in "Physics of semiconductors", (Wiley, New York, 1981), p. 271.
12. Werner, J.H. and Gutler, H.H., J. Appl. Phys. 69, 1522 (1991).
13. Tung, R.T., Levi, A.F.J., Sullivan, J.P. and Schery, F., Phys. Rev. Lett. 66, 72 (1991).