Characterization of electronic charged states of silicon nanocrystals as a floating gate in MOS structures

Materials Research Society Symposium Proceedings

Volumn 830, Issue , 2005, Pages 249-254

  Miyazaki, Seiichi ^a   Shibaguchi, Taku ^a   Ikeda, Mitsuhisa ^a  

^a HIROSHIMA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CHARACTERIZATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CHARGE; ELECTRIC POTENTIAL; ELECTRON TRAPS; FERMI LEVEL; GATES (TRANSISTOR); MOS CAPACITORS; MOSFET DEVICES; PYROLYSIS; SILICON; THERMOOXIDATION;

DOT DENSITY; ELECTRONIC CHARGED STATES; FLOATING GATE; GATE OXIDE; ROOM TEMPERATURE;

NANOSTRUCTURED MATERIALS;

EID: 20344405194     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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