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Volumn 16, Issue 20, 2008, Pages 15343-15352

Three-dimensional characterization of extreme ultraviolet mask blank defects by interference contrast photoemission electron microscopy

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL SYMMETRY; ELECTRON MICROSCOPES; EXTREME ULTRAVIOLET LITHOGRAPHY; PHOTOEMISSION;

EID: 54749133088     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.16.015343     Document Type: Article
Times cited : (6)

References (14)
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  • 3
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  • 5
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    • Actinic extreme ultraviolet lithogrphy mask blank defect inspection by photoemission microscopy
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    • Lin, J.1    Neuhauesler, U.2    Slieh, J.3    Kleinberg, U.4
  • 6
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    • Highly sensitive detection technology of buried defects in extreme ultraviolet masks using at-wavelength scanning dark-field microscopy
    • V. Farys, P. Schiavone, P. Polack, M. Idir, and V. Muffato, "Highly sensitive detection technology of buried defects in extreme ultraviolet masks using at-wavelength scanning dark-field microscopy," Appl. Phys. Lett. 87,024102 (2005).
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  • 7
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    • Microspectroscopy and imaging using a delay line detector in time-of-flight photoemission microscopy
    • A. Oelsner, O. Schmidt, M. Schicketanz, and G. Schönhense "Microspectroscopy and imaging using a delay line detector in time-of-flight photoemission microscopy," Rev. Sci. Instrum.72, 3968-3974 (2001).
    • (2001) Rev. Sci. Instrum , vol.72 , pp. 3968-3974
    • Oelsner, A.1    Schmidt, O.2    Schicketanz, M.3    Schönhense, G.4
  • 8
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    • Characterizing topography-induced contrast in photoelectron emission microscopy
    • K. Siegrist, E. Williams, and V. Ballarotto, "Characterizing topography-induced contrast in photoelectron emission microscopy," J.Vac.Sci.Technol. A 21, 1098-1102 (2003).
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  • 9
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    • Time-of-flight photoemission electron microscopy-a new way to chemical surface analysis
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.