Actinic extreme ultraviolet lithography mask blank defect inspection by photoemission electron microscopy

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 24, Issue 6, 2006, Pages 2631-2635

  Lin, Jingquan ^a   Neuhaeusler, Ulrich ^a   Slieh, Jawad ^a   Brechling, Armin ^a   Kleineberg, Ulf ^a,d   Heinzmann, Ulrich ^a   Oelsner, Andreas ^b   Valdaitsev, Dima ^b   Schoenhense, Gerd ^b   Weber, Nils ^c   Escher, Matthias ^c   Merkel, Michael ^c  

^a BIELEFELD UNIVERSITY   (Germany)

^b JOHANNES GUTENBERG UNIVERSITY   (Germany)

^c Focus GMBH ^*  (Germany)

^d UNIVERSITY OF MUNICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECTS; ELECTRON BEAM LITHOGRAPHY; ELECTRON MICROSCOPES; PHOTOEMISSION; PHOTOLITHOGRAPHY;

DEFECT STRUCTURES; EXTREME ULTRAVIOLET (EUV) LITHOGRAPHY; PHOTOEMISSION ELECTRON MICROSCOPY; PROGRAMED PHASE GRATINGS;

MASKS;

EID: 33845239424     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2366607     Document Type: Article

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