At-wavelength inspection of sub-40 nm defects in extreme ultraviolet lithography mask blank by photoemission electron microscopy

Optics Letters

Volumn 32, Issue 13, 2007, Pages 1875-1877

  Lin, Jingquan ^a   Weber, Nils ^b   Maul, Jochen ^c   Hendel, Stefan ^d   Rott, Karsten ^d   Merkel, Michael ^b   Schoenhense, Gerd ^c   Kleineberg, Ulf ^a  

^a UNIVERSITY OF MUNICH   (Germany)

^b FOCUS GmbH   (Germany)

^c JOHANNES GUTENBERG UNIVERSITY   (Germany)

^d BIELEFELD UNIVERSITY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

PHOTOEMISSION ELECTRON MICROSCOPY; PROBE NANOSCALE DEFECTS; ULTRAVIOLET LITHOGRAPHY MASK BLANK;

CRYSTAL DEFECTS; ELECTRON MICROSCOPY; LITHOGRAPHY; MULTILAYERS;

PHOTOMASKS;

ELECTRON MICROSCOPY; LITHOGRAPHY; MASKING; MULTILAYERS;

EID: 39749165812     PISSN: 01469592     EISSN: None     Source Type: Journal    
DOI: 10.1364/OL.32.001875     Document Type: Article

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