High mobility III-V mosfet technology

2007 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2007

Volumn , Issue , 2007, Pages 235-238

  Passlack, M ^a   Droopad, R ^a   Rajagopalan, K ^a   Abrokwah, J ^a   Zurcher, P ^a   Hill, R ^b   Moran, D ^b   Li, X ^b   Zhou, H ^b   MacIntyre, D ^b   Thoms, S ^b   Thayne, I ^b  

^a FREESCALE SEMICONDUCTOR INC   (United States)

^b UNIVERSITY OF GLASGOW   (United Kingdom)

Author keywords

CMOS; Gallium arsenide; High mobility; Iii v semiconductor; MOSFET; RF power

Indexed keywords

EFFECTIVE CHANNEL MOBILITIES; HIGH MOBILITY; II-IV SEMICONDUCTORS; MAXIMUM TRANSCONDUCTANCE; MOBILE AND WIRELESS APPLICATIONS; MOS-FET; OFF-STATE BREAKDOWN VOLTAGES; RF-POWER;

CMOS INTEGRATED CIRCUITS; DRAIN CURRENT; GALLIUM ARSENIDE; HIGH ELECTRON MOBILITY TRANSISTORS; SEMICONDUCTOR DEVICE MANUFACTURE;

MOSFET DEVICES;

EID: 54749106417     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (18)

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