Interface charge and nonradiative carrier recombination in Ga2O3-GaAs interface structures

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 17, Issue 1, 1999, Pages 49-52

  Kummel, A C ^a  

^a MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 24644482800     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (9)

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2. D. K. Schroeder, Semiconductor Material and Device Characterization (Wiley, New York, 1990), p. 367.
3. For an introduction to recombination processes see, e.g., R. K. Ahrenkiel and M. S. Lundstrom, in Minority Carriers in III-V Semiconductors: Physics and Applications (Academic, Boston, 1993).
4. O. Brandt, H. Yang, and K. H. Ploog, Phys. Rev. B 54, R5215 (1996).
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6. O. Brandt, K. Kanamoto, M. Gotoda, T. Isu, and N. Tsukada, Phys. Rev. B 51, 7029 (1995).
7. M. Passlack, M. Hong, E. F. Schubert, G. J. Zydzik, J. P. Mannaerts, W. S. Hobson, and T. D. Harris, J. Appl. Phys. 81, 7647 (1997).
8. M. Passlack, M. Hong, J. P. Mannaerts, R. L. Opila, S. N. G. Chu, N. Moriya, F. Ren, and J. R. Kwo, IEEE Trans. Electron Devices 44, 214 (1997).
9. See, for example, A. S. Grove, Physics and Technology of Semiconductor Devices (Wiley, New York, 1967).