Phase transformation and residual stress probed by Raman spectroscopy in diamond-turned single crystal silicon

Proceedings of the Institution of Mechanical Engineers, Part B: Journal of Engineering Manufacture

Volumn 222, Issue 9, 2008, Pages 1065-1073

  Jasinevicius, R G ^a,c   Duduch, J G ^a   Montanari, L ^a   Pizani, P S ^b  

^a EESC   (Brazil)

^b FEDERAL UNIVERSITY OF SÃO CARLOS   (Brazil)

^c UNIVERSITY OF SÃO PAULO   (Brazil)

Author keywords

Phase transformation; Raman spectroscopy; Semiconductor crystals; Ultraprecision diamond turning

Indexed keywords

ATOMIC SPECTROSCOPY; BRITTLENESS; CRYSTAL ATOMIC STRUCTURE; CRYSTALLOGRAPHY; CRYSTALS; DIAMONDS; ELECTRIC CONDUCTIVITY; FRICTION; INFRARED SPECTROSCOPY; MACHINING; POWDERS; RAMAN SCATTERING; RAMAN SPECTROSCOPY; RESIDUAL STRESSES; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR MATERIALS; SILICON; SILICON WAFERS; SINGLE CRYSTALS; SPECTRUM ANALYSIS; STRENGTH OF MATERIALS; SURFACE PROPERTIES; SURFACE ROUGHNESS; THEOREM PROVING; THICKNESS MEASUREMENT; TURNING;

AMORPHOUS SURFACE LAYERS; ATOMIC FORCES; BRITTLE MATERIALS; COMPRESSIVE RESIDUAL STRESSES; CRYSTAL SILICONS; CUTTING CONDITIONS; DEPTH OF CUTS; DIAMOND TURNINGS; DUCTILE MODES; HIGH QUALITIES; INFRARED SPECTRUM; MACHINED SURFACES; MACHINING TECHNOLOGIES; MICROCRACK FORMATIONS; MICROFLUIDIC DEVICES; MONOCRYSTALLINE SEMICONDUCTORS; MONOCRYSTALLINE SILICONS; PHASE TRANSFORMATION; PHASE TRANSFORMATIONS; RAMAN SPECTRUM; SEMICONDUCTOR CRYSTALS; STRUCTURAL ALTERATIONS; SUBSURFACE CRACKS; SURFACE FINISHES; ULTRAPRECISION DIAMOND TURNING;

SURFACES;

EID: 54549114315     PISSN: 09544054     EISSN: None     Source Type: Journal    
DOI: 10.1243/09544054JEM1161     Document Type: Article

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