Indium oxide thin-film transistor by reactive ion beam assisted deposition

Physica Status Solidi (A) Applications and Materials Science

Volumn 205, Issue 8, 2008, Pages 1925-1928

  Vygranenko, Y ^a   Wang, K ^b   Vieira, M ^a   Nathan, A ^c  

^a INSTITUTO SUPERIOR DE ENGENHARIA DE LISBOA   (Portugal)

^b UNIVERSITY OF WATERLOO   (Canada)

^c UNIVERSITY COLLEGE LONDON   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ADJUSTING; AMORPHOUS; BEAM EVAPORATIONS; BEAM FLUXES; CRYSTALLINITY; DEPOSITION CONDITIONS; ELECTRICAL PROPERTIES; FILM PROPERTIES; FILM STRUCTURES; INDIUM OXIDE FILMS; INDIUM OXIDES; INTRINSIC STRESSES; MICROSTRUCTURAL; ON/OFF CURRENT RATIOS; OXYGEN ION BEAMS; OXYGEN IONS; ROOM TEMPERATURES; SILICON DIOXIDE GATES;

AMORPHOUS FILMS; BEAM PLASMA INTERACTIONS; CRYSTAL STRUCTURE; ELECTRIC PROPERTIES; ELECTROMAGNETIC WAVES; GATE DIELECTRICS; GATES (TRANSISTOR); INDIUM; ION BEAMS; ION BOMBARDMENT; IONS; METALLIC COMPOUNDS; OXIDE FILMS; OXYGEN; SEMICONDUCTING FILMS; SEMICONDUCTING INDIUM; SEMICONDUCTING ORGANIC COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS; SILICA; THIN FILM DEVICES; THIN FILM TRANSISTORS; TRANSISTORS;

ION BEAM ASSISTED DEPOSITION;

EID: 54249170594     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200778883     Document Type: Conference Paper

References (19)

1. S. Masuda, K. Kitamura, Y. Okumura, S. Miyatake, H. Tabata, and T. Kawai, J. Appl. Phys. 93, 1624 (2003).
2. P. F. Carcia, R. S. McLean, M. H. Reilly, and G. Nunes, Appl. Phys. Lett. 82, 1117 (2003).
3. E. Fortunato, P. Barquinha, A. Pimentel, A. Gonçalves, A. Marques, R. Martins, and L. Pereira, Appl. Phys. Lett. 85, 2541 (2004).
4. R. Presley, C. Munsee, C.-H. Park, D. Hong, J. Wager, and D. Keszler, J. Phys. D: Appl. Phys. 37, 2810 (2004).
5. H. Chiang, J. Wager, R. Hoffman, J. Jeong, and D. Keszler, Appl. Phys. Lett. 86, 013503 (2005).
6. N. Dehuff, E. Kettenring, D. Hong, H. Chiang, J. Wager, R. Hoffman, C.-H. Park, and D. Keszler, J. Appl. Phys. 97, 064505 (2005).
7. T. Miyasako, M. Senoo, and E. Tokumitsu, Appl. Phys. Lett. 86, 162902 (2005).
8. G. Lavareda, C. Nunes de Carvalho, E. Fortunato, A. Ramos, E. Alves, O. Conde, and A. Amaral, J. Non-Cryst. Solids 352, 2311 (2006).
9. L. Wang and T. J. Marks, Proc. of SPIE 6321, 63210A (2006).
10. L. Wang, M.-H. Yoon, G. Lu, Yu Yang, A. Facchetti, and T. J. Marks, Nature Mater. 5, 893 (2006).
11. C. Liu, T. Matsutani, T. Asanuma, K. Murai, M. Kiuchi, E. Alves, and M. Reis, J. Appl. Phys. 93, 2262 (2003).
12. F. A. Smidt, Int. Mater. Rev. 35, 61 (1990).
13. P. F. Carcia, R. S. McLean, M. H. Reilly, Z. G. Li, J. J. Pillione, and R. F. Messier, J. Vac. Sci. Technol. A 21, 745 (2003).
14. R. González-Elipe, F. Yubero, and J. M. Sanz, Low Energy Ion Assisted Film Growth (Imperial College Press, London 2003).
15. H. L. Hartnegel, A. L. Dawar, A. K. Jain, and C. Jagadish, Semiconducting Transparent Thin Films (Institute of Physics Publ., Bristol 1995).
16. P. F. Carcia, R. S. McLean, and M. H. Reilly, J. Soc. Inf. Disp. 13(7), 547 (2005).
17. D. W. Greve, Field Effect Devices and Applications: Devices for Portable, Low-Power, and Imaging Systems, 1st ed. (Prentice Hall, 1998), Chap. 7, p. 287.
18. Y. Vygranenko, K. Wang, and A. Nathan, Appl. Phys. Lett. 91, 263508 (2007).
19. P. Barquinha, A. M. Vila, G. Goncalves, L. Pereira, R. Martins, J. R. Morante, and E. Fortunato, IEEE Trans. Electron Devices 55, 954 (2008).