Local oxidation of Si surfaces by tapping-mode scanning probe microscopy: - Size dependence of oxide wires on dynamic properties of cantilever

Japanese Journal of Applied Physics

Volumn 47, Issue 1 PART 2, 2008, Pages 718-720

  Nishimura, Shinya ^a   Ogino, Takumi ^a   Takemura, Yasushi ^b   Shirakashi, Jun Ichi ^a  

^a TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY   (Japan)

^b YOKOHAMA NATIONAL UNIVERSITY   (Japan)

Author keywords

Amplitude; Anodic oxidation; Q factor; Scanning probe microscopy (SPM); Surface modification; Tapping mode

Indexed keywords

CHEMICAL OXYGEN DEMAND; MICROSCOPIC EXAMINATION; OXIDATION; Q FACTOR MEASUREMENT; SCANNING; SCANNING ELECTRON MICROSCOPY; SCANNING PROBE MICROSCOPY; SELF PHASE MODULATION; SILICON; STATISTICAL PROCESS CONTROL; WIRE;

AMPLITUDE; Q-FACTOR; SCANNING PROBE MICROSCOPY (SPM); SURFACE MODIFICATION; TAPPING MODE;

ANODIC OXIDATION;

EID: 54249105012     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.47.718     Document Type: Article

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