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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 46, Issue 4 B, 2007, Pages 1830-1840

Substrate orientation dependence of NiSi silicided junction leakage induced by anisotropic Ni migration in crystal Si

(2) Tsuchiaki, Masakatsu a Nishiyama, Akira a

a TOSHIBA CORPORATION (Japan)

Author keywords

Anisotropy; Crystal orientation; Junction leakage; Ni diffusion; Nickel; Silicide; Substrate orientation; Thermal instability

Indexed keywords

CRYSTALLOGRAPHY; LEAKAGE CURRENTS; NICKEL COMPOUNDS; OPTICAL ANISOTROPY; THERMODYNAMIC STABILITY;

CRYSTALLOGRAPHIC INFLUENCES; JUNCTION LEAKAGE; SUBSTRATE ORIENTATION;

CRYSTAL ORIENTATION;

EID: 34547857498 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.46.1830 Document Type: Article

Times cited : (14)

References (25)

1
- 0029310051
- T. Morimoto, T. Ohguro, H. Momose, T. Iinuma, I. Kunishima, K. Suguro, I. Katakabe, H. Nakajima, M. Tsuchiaki, M. Ono, Y. Katsumata, and H. Iwai: IEEE Trans. Electron Devices 42 (1995) 915.
- (1995) IEEE Trans. Electron Devices , vol.42 , pp. 915
- Morimoto, T.¹ Ohguro, T.² Momose, H.³ Iinuma, T.⁴ Kunishima, I.⁵ Suguro, K.⁶ Katakabe, I.⁷ Nakajima, H.⁸ Tsuchiaki, M.⁹ Ono, M.¹⁰ Katsumata, Y.¹¹ Iwai, H.¹²

2
- 0036133199
- H. Iwai, T. Ohguro, and S. Ohmi: Microelectron. Eng. 60 (2002) 157.
- (2002) Microelectron. Eng , vol.60 , pp. 157
- Iwai, H.¹ Ohguro, T.² Ohmi, S.³

3
- 36449003277
- A. Vantomme, M. Nicolet, and N. Thepdore: J. Appl. Phys. 75 (1994) 3882.
- (1994) J. Appl. Phys , vol.75 , pp. 3882
- Vantomme, A.¹ Nicolet, M.² Thepdore, N.³

4
- 0024768419
- E. K. Broadbent, R. F. Irani, A. E. Morgan, and P. Maillot: IEEE Trans. Electron Devices 36 (1989) 2440.
- (1989) IEEE Trans. Electron Devices , vol.36 , pp. 2440
- Broadbent, E.K.¹ Irani, R.F.² Morgan, A.E.³ Maillot, P.⁴

5
- 33846174971
- C. Y. Sung, H. Y. Hung, H. Y. Ng, K. L. Saenger, V. Chan, S. W. Crowder, J. Li, J. A. Ott, R. Bendernagel, J. J. Kempisty, V. Ku, H. K. Lee, Z. Luo, A. Manden, R. T. Mo, P. Y. Nguyen, G. Pfeiffer, M. Raccioppo, N. Rovedo, D. Sandra, J. P. deSouza, R. Zhang, Z. Ren, and C. W. Wann: IEDM Tech. Dig., 2005, p. 235.
- (2005) IEDM Tech. Dig , pp. 235
- Sung, C.Y.¹ Hung, H.Y.² Ng, H.Y.³ Saenger, K.L.⁴ Chan, V.⁵ Crowder, S.W.⁶ Li, J.⁷ Ott, J.A.⁸ Bendernagel, R.⁹ Kempisty, J.J.¹⁰ Ku, V.¹¹ Lee, H.K.¹² Luo, Z.¹³ Manden, A.¹⁴ Mo, R.T.¹⁵ Nguyen, P.Y.¹⁶ Pfeiffer, G.¹⁷ Raccioppo, M.¹⁸ Rovedo, N.¹⁹ Sandra, D.²⁰ more..

6
- 6344219953
- M. Tsuchiaki, K. Ohuchi, and C. Hongo: Jpn. J. Appl. Phys. 43 (2004) 5166.
- (2004) Jpn. J. Appl. Phys , vol.43 , pp. 5166
- Tsuchiaki, M.¹ Ohuchi, K.² Hongo, C.³

7
- 0038155551
- M. Tsuchiaki, C. Hongo, A. Takashima, and H. Ohuchi: Jpn. J. Appl. Phys. 41 (2002) 2437.
- (2002) Jpn. J. Appl. Phys , vol.41 , pp. 2437
- Tsuchiaki, M.¹ Hongo, C.² Takashima, A.³ Ohuchi, H.⁴

8
- 6344224684
- Springer-Verlag, Berlin, Chap. 4, p
- K. Graff: Metal Impurities in Silicon-Device Fabrication (Springer-Verlag, Berlin, 1995) Chap. 4, p. 77.
- (1995) Metal Impurities in Silicon-Device Fabrication , pp. 77
- Graff, K.¹

9
- 0031998838
- A. A. Istratov and E. R. Weber: Appl. Phys. A 66 (1998) 123.
- (1998) Appl. Phys. A , vol.66 , pp. 123
- Istratov, A.A.¹ Weber, E.R.²

10
- 0000008787
- M. Yoshida and K. Saito: Jpn. J. Appl. Phys. 6 (1967) 573.
- (1967) Jpn. J. Appl. Phys , vol.6 , pp. 573
- Yoshida, M.¹ Saito, K.²

11
- 0024627221
- H. Kitagawa and H. Nakashima: Jpn. J. Appl. Phys. 28 (1989) 305.
- (1989) Jpn. J. Appl. Phys , vol.28 , pp. 305
- Kitagawa, H.¹ Nakashima, H.²

12
- 0017954068
- M. K. Bakhadyrkhanov and S. Zainoabidinov: Sov. Phys. Semicond. 12 (1978) 398.
- (1978) Sov. Phys. Semicond , vol.12 , pp. 398
- Bakhadyrkhanov, M.K.¹ Zainoabidinov, S.²

13
- 0000127464
- M. Seibt and K. Graff: J. Appl. Phys. 63 (1988) 4444.
- (1988) J. Appl. Phys , vol.63 , pp. 4444
- Seibt, M.¹ Graff, K.²

14
- 0024612363
- M. Seibt and W. Schroter: Philos. Mag. A 59 (1989) 337.
- (1989) Philos. Mag. A , vol.59 , pp. 337
- Seibt, M.¹ Schroter, W.²

15
- 84955110983
- M. Hourai, K. Murakami, T. Shigematsu, N. Fujino, and T. Shiraiwa: Jpn. J. Appl. Phys. 28 (1989) 2413.
- (1989) Jpn. J. Appl. Phys , vol.28 , pp. 2413
- Hourai, M.¹ Murakami, K.² Shigematsu, T.³ Fujino, N.⁴ Shiraiwa, T.⁵

16
- 0020812602
- H. Tsuya and F. Shimura: Phys. Status Solidi A 79 (1983) 199.
- (1983) Phys. Status Solidi A , vol.79 , pp. 199
- Tsuya, H.¹ Shimura, F.²

17
- 27644432247
- G. Eneman, E. Simoen, R. Delhougne, P. Verheyen, R. Loo, and K. D. Meyer: Appl. Phys. Lett. 87 (2005) 192112.
- (2005) Appl. Phys. Lett , vol.87 , pp. 192112
- Eneman, G.¹ Simoen, E.² Delhougne, R.³ Verheyen, P.⁴ Loo, R.⁵ Meyer, K.D.⁶

18
- 0008968656
- M. Tsuchiaki, H. Fujimori, T. Iinuma, and A. Kawasaki: J. Appl. Phys. 85 (1999) 8255.
- (1999) J. Appl. Phys , vol.85 , pp. 8255
- Tsuchiaki, M.¹ Fujimori, H.² Iinuma, T.³ Kawasaki, A.⁴

19
- 36749106352
- L. C. Kimerling and J. L. Beneton: Appl. Phys. Lett. 39 (1981) 410.
- (1981) Appl. Phys. Lett , vol.39 , pp. 410
- Kimerling, L.C.¹ Beneton, J.L.²

20
- 36149019492
- G. D. Watkins and J. W. Corbett: Phys. Rev. 138 (1965) A543.
- (1965) Phys. Rev , vol.138
- Watkins, G.D.¹ Corbett, J.W.²

21
- 21644454069
- H. Irie, K. Kita, K. Kyuno, and A. Toriumi: IEDM Tech. Dig., 2004, p. 225.
- (2004) IEDM Tech. Dig , pp. 225
- Irie, H.¹ Kita, K.² Kyuno, K.³ Toriumi, A.⁴

22
- 34547873407
- T. Ohguro, T. Morimoto, Y. Ushiku, and H. Iwai: Ext. Abstr. Solid State Device and Materials, 1993, p. 192.
- T. Ohguro, T. Morimoto, Y. Ushiku, and H. Iwai: Ext. Abstr. Solid State Device and Materials, 1993, p. 192.

23
- 0029516375
- K. Goto, A. Fushida, J. Watanabe, T. Sukegawa, K. Kawamura, T. Yamazaki, and T. Sugii: IEDM Tech. Dig., 1995, p. 449.
- (1995) IEDM Tech. Dig , pp. 449
- Goto, K.¹ Fushida, A.² Watanabe, J.³ Sukegawa, T.⁴ Kawamura, K.⁵ Yamazaki, T.⁶ Sugii, T.⁷

24
- 0032736782
- K. Goto, A. Fushida, J. Watanabe, T. Sukegawa, Y. Toda, T. Nakamura, T. Yamazaki, and T. Sugii: IEEE Trans. Electron Devices 46 (1999) 117.
- (1999) IEEE Trans. Electron Devices , vol.46 , pp. 117
- Goto, K.¹ Fushida, A.² Watanabe, J.³ Sukegawa, T.⁴ Toda, Y.⁵ Nakamura, T.⁶ Yamazaki, T.⁷ Sugii, T.⁸

25
- 0004020231
- Clarendon Press, Oxford
- J. Crank: The Mathematics of Diffusion (Clarendon Press, Oxford, 1975) p. 5.
- (1975) The Mathematics of Diffusion , pp. 5
- Crank, J.¹

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