Systematic investigation of leakage suppression by pre-silicide implantation for CoSi2 formation on shallow n+/p Si diodes

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 4 B, 2003, Pages 1847-1854

  Tsuchiaki, Masakatsu ^a   Murakoshi, Atsushi ^a   Hongo, Chie ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

Amorphization; Arsenic; Co diffusion; Cobalt; Germanium; Ion implantation; Junction leakage; Oxygen; Silicide; Solid phase diffusion

Indexed keywords

AMORPHIZATION; ARSENIC; DIFFUSION IN SOLIDS; ETCHING; GERMANIUM; ION IMPLANTATION; OXYGEN; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR JUNCTIONS;

HIGH DOSE IMPLANTATION; LEAKAGE SUPPRESSION; PRE-SILICIDE ION IMPLANTATION; SILICIDATION; SOLID PHASE DIFFUSION;

SEMICONDUCTOR DIODES;

EID: 0037672213     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.1847     Document Type: Article

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