A novel Bi-layer cobalt silicide process with nitrogen implantation for sub-50nm CMOS and beyond

IEEE Symposium on VLSI Circuits, Digest of Technical Papers

Volumn , Issue , 2002, Pages 136-137

  Itonaga, K ^a   Eriguchi, K ^a   Miyanaga, I ^a   Kajiya, A ^a   Ogura, M ^a   Tsutsumi, T ^a   Sayama, H ^a   Oda, H ^a   Eimori, T ^a   Morimoto, H ^a  

^a PANASONIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AGGLOMERATION; COBALT COMPOUNDS; CRYSTALLOGRAPHY; GRAIN SIZE AND SHAPE; ION IMPLANTATION; LEAKAGE CURRENTS; NITROGEN; PHASE TRANSITIONS; SECONDARY ION MASS SPECTROMETRY; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY;

BI-LAYERS;

CMOS INTEGRATED CIRCUITS;

EID: 0036053771     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)