A new leakage mechanism of Co salicide and optimized process conditions

IEEE Transactions on Electron Devices

Volumn 46, Issue 1, 1999, Pages 117-124

  Goto, Ken Ichi ^a   Fushida, Atsuo ^a   Watanabe, Junichi ^a   Sukegawa, Takae ^a   Tada, Yoko ^a   Nakamura, Tomoji ^a   Yamazaki, Tatsuya ^a   Sugii, Toshihiro ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; COBALT COMPOUNDS; COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; LEAKAGE CURRENTS; MONTE CARLO METHODS; OPTIMIZATION; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR JUNCTIONS;

COBALT SALICIDES; ULTRASHALLOW JUNCTIONS;

CMOS INTEGRATED CIRCUITS;

EID: 0032736782     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.737449     Document Type: Article

References (7)

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2. K. Goto, T. Yamazaki, A. Fushida, S. Inagaki, and H. Yagi, Optimization of salicide process for 0. l-ftm CMOS devices, in Symp. VLSI Tech., 1994, pp. 119-120.
3. J. B. Lasky, J. S. Nakos, O. J. Cain, and P. J. Geiss, Comparison of transformation to low-resistivity phase and agglomeration of TiSi2 and CoSi2, IEEE Trans. Electron Devices, vol. 38, pp. 262-271, Feb. 1991.
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5. K. Goto, A. Fushida, J. Watanabe, T. Sukegawa, K. Kawamura, T. Yamazaki, and T. Sugii, Leakage mechanism and optimized conditions of Co salicide process for deep submicron CMOS devices, in IEDM Tech. Dig., 1995, pp. 906-909.
6. R. Liu, D. S. Williams, and W. T. Lynch, A study of the leakage mechanisms of suicided n+/p junctions, J. Appt. Phys., vol. 63, no. 6, pp. 1990-1999, 1988.
7. H. C. Cheng, M. H. Juang, C. T. Lin, and L. M. Huang, A silicidationinduced process consideration for forming scale-down suicided junction, IEEE Electron Devices Lett., vol. 15, pp. 342-344, Sept. 1994.