In situ observation of initial nucleation and growth processes in supercritical fluid deposition of copper

Japanese Journal of Applied Physics

Volumn 47, Issue 2 PART 1, 2008, Pages 885-890

  Momose, Takeshi ^a   Sugiyama, Masakazu ^a   Shimogaki, Yukihiro ^a  

^a UNIVERSITY OF TOKYO   (Japan)

Author keywords

Copper; Copper interconnects; Deposition; In situ; Nucleation; Reflectivity; Supercritical carbon dioxide

Indexed keywords

ADSORPTION; CARBON DIOXIDE; CONCENTRATION (PROCESS); DEPOSITION; EFFLUENT TREATMENT; INDUSTRIAL WASTE TREATMENT; METALLIC FILMS; NUCLEATION; OPTICAL INTERCONNECTS; REFLECTION; SUPERCRITICAL FLUID EXTRACTION; SUPERCRITICAL FLUIDS; SURFACE MORPHOLOGY;

COALESCENCE TEMPERATURES; CONTINUOUS; COPPER INTERCONNECTS; CU FILMS; FILM THINS; HIGH CONCENTRATIONS; IN SITU; MEASURING; NUCLEATION AND GROWTHS; NUCLEATION TEMPERATURES; NUMBER DENSITIES; PRECURSOR CONCENTRATIONS; REFLECTIVITY; SCALE INTEGRATIONS; SEED LAYERS; SUPERCRITICAL CARBON DIOXIDE; SUPERCRITICAL FLUID DEPOSITIONS; SURFACE REFLECTIVITIES; SURFACE SATURATIONS; WHITE LIGHT;

COPPER;

EID: 54249090840     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.47.885     Document Type: Article

References (19)

1. R. H. Havemann and J. A. Hutchby: Proc. IEEE 89 (2001) 586.
2. International Technology Roadmap for Semiconductors (ITRS), 2004 edition.
3. J. M. Blackburn, D. P. Long, A. Cabanas, and J. J. Watkins: Science 294 (2001) 141.
4. E. Kondoh and H. Kato: Microelectron. Eng. 64 (2002) 495.
5. E. Kondoh: Jpn. J. Appl. Phys. 43 (2004) 3928.
6. A. Cabanas, D. P. Long, and J. J. Watkins: Chem. Mater. 16 (2004) 2028.
7. J. M. Blackburn, D. P. Long, and J. J. Watkins: Chem. Mater. 12 (2000) 2625.
8. H. Ohde, S. Kramer, S. Moore, and C. M. Wai: Chem. Mater. 16 (2004) 4028.
9. N. E. Fernandes, S. M. Fisher, J. C. Poshusta, D. G. Vlachos, M. Tsapatsis, and J. J. Watkins: Chem. Mater. 13 (2001) 2023.
10. Y. S. Kim and Y. Shimogaki: J. Vac. Sci. Technol. A 19 (2001) 2642.
11. Y. S. Kim and Y. Shimogaki: Jpn. J. Appl. Phys. 40 (2001) L1380.
12. Y. S. Kim, H. Hamamura, and Y. Shimogaki: Jpn. J. Appl. Phys. 41 (2002) 1500.
13. T. Momose, M. Sugiyama, and Y. Shimogaki: Jpn. J. Appl, Phys. 44 (2005) L1109.
14. Y. Kajikawa, T. Tsumura, S. Noda, H. Komiyama, and Y. Shimogaki: Jpn. J. Appl. Phys. 43 (2004) 3945.
15. S. Noda, T. Tsumura, J. Fukuhara, T. Yoda, H. Komiyama, and Y. Shimogaki: Jpn. J. Appl. Phys. 43 (2004) 6974.
16. K. Sugai, H. Okabayashi, A. Kobayashi, T. Yako, and S. Kishida: Jpn. J. Appl. Phys. 34 (1995) L429.
17. M. Sugiyama, T. lino, H. Itoh, J. Aoyama, H. Komiyama, and Y. Shimogaki: Jpn. J. Appl. Phys. 38 (1999) L1528.
18. T. Momose, M. Sugiyama, and Y. Shimogaki: Proc. Advanced Metallization Conf., 2004, p. 627.
19. S. Noda, T. Tsumura, J. Fukuhara, T. Yoda, H. Komiyama, and Y. Shimogaki: Jpn. J. Appl. Phys. 43 (2004) 6974.