Effect of underlayers on the morphology and orientation of aluminum films prepared by chemical vapor deposition using dimethylaluminumhydride

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 38, Issue 12 B, 1999, Pages

  Sugiyama, Masakazu ^a   Iino, Tomohisa ^a   Itoh, Hitoshi ^a,b   Aoyama, Jyun Ichi ^a,b   Komiyama, Hiroshi ^a   Shimogaki, Yukihiro ^a  

^a UNIVERSITY OF TOKYO   (Japan)

^b SEMICONDUCTOR TECHNOLOGY ACADEMIC RESEARCH CENTER   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; COALESCENCE; COMPONENTS; COPPER; CRYSTAL ORIENTATION; HYDRIDES; LIGHT REFLECTION; MORPHOLOGY; NUCLEATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SURFACE ROUGHNESS; TITANIUM NITRIDE;

DIMETHYLALUMINUMHYDRIDE;

SEMICONDUCTING FILMS;

EID: 0033318687     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.l1528     Document Type: Article

References (6)