Secondary ion mass spectrometry characterization of source/drain junctions for strained silicon channel metal-oxide-semiconductor field-effect transistors

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 22, Issue 1, 2004, Pages 327-331

  Duda, Erika ^a   Lu, Shifeng ^a   Liu, Chun Li ^a   Jiang, Zhixiong ^b   Lerma, Joe ^b   Barr, Alex ^b   Thean, Aaron ^b   Orlowski, Marius ^b   White, Ted ^b   Nguyen, Bich Yen ^b  

^a MOTOROLA INC   (United States)

^b MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CARRIER MOBILITY; COMPOSITION; COMPUTER SIMULATION; DIFFUSION; GERMANIUM; HIGH TEMPERATURE EFFECTS; ION IMPLANTATION; MOSFET DEVICES; OSCILLATIONS; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR DOPING; SILICON; STRAIN; SUBSTRATES;

DEPTH PROFILING; DOPANT DIFFUSION; ULTRASHALLOW JUNCTIONS;

SEMICONDUCTOR JUNCTIONS;

EID: 12144288176     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1640659     Document Type: Conference Paper

References (4)

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3. C.-L. Liu, M. Orlowski, A. Thean, T. White, B.-Y. Nguyen, H. Rueda, and B. Liu, Phys. Status Solidi B 239, 35 (2003).
4. S. Eguchi, J. L. Hoyt, C. W. Leitz, and E. A. Fitzgerald, Appl. Phys. Lett. 80, 1743 (2002).