MOSFET hot-carrier reliability improvement by forward-body bias

IEEE Electron Device Letters

Volumn 27, Issue 7, 2006, Pages 605-608

  Hokazono, Akira ^a,b   Balasubramanian, Sriram ^a   Ishimaru, Kazunari ^b   Ishiuchi, Hidemi ^b   Hu, Chenming ^a   Liu, Tsu Jae King ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b TOSHIBA CORPORATION   (Japan)

Author keywords

Forward body bias; Hot carrier reliability; MOSFET; Reverse body bias; Substrate bias

Indexed keywords

CMOS INTEGRATED CIRCUITS; HOT CARRIERS; RELIABILITY; STANDBY POWER SYSTEMS; THRESHOLD VOLTAGE; VOLTAGE CONTROL;

FORWARD-BODY BIAS; REVERSE-BODY BIAS; SUBSTRATE BIAS;

MOSFET DEVICES;

EID: 33745646570     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2006.877306     Document Type: Article

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