Resonant and phonon-assisted tunneling transport through silicon quantum dots embedded in SiO2

Applied Physics Letters

Volumn 93, Issue 13, 2008, Pages

  Berghoff, B ^a   Suckow, S ^a   Rolver R ^a   Spangenberg, B ^a   Kurz, H ^a   Dimyati, A ^a   Mayer, J ^a  

^a RWTH AACHEN UNIVERSITY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

QUANTUM ELECTRONICS; SEMICONDUCTOR QUANTUM DOTS; SILICON; SILICON COMPOUNDS;

CHARGE TRANSPORTING; PHONON-ASSISTED TUNNELING; SILICON QUANTUM DOTS;

QUANTUM CHEMISTRY;

EID: 53349146176     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2992057     Document Type: Article

References (16)

1. A. Irrera, F. Iacona, I. Crupi, C. D. Presti, G. Franz, C. Bongiorno, D. Sanfilippo, G. D. Stefano, A. Piana, P. G. Fallica, A. Canino, and F. Priolo, Nanotechnology 17, 1428 (2006).
2. L. Wu, M. Dai, X. Huang, W. Li, and K. Chen, J. Vac. Sci. Technol. B 22, 678 (2004).
3. N.-M. Park, S. H. Kim, and S. Maeng, Appl. Phys. Lett. 89, 153117 (2006).
4. G. Conibeer, M. Green, R. Corkish, Y. Cho, E.-C. Cho, C.-W. Jiang, T. Fangsuwannarak, E. Pink, Y. Huang, T. Puzzer, T. Trupke, B. Richards, A. Shalav, and K.-L. Lin, Thin Solid Films 51, 654 (2006).
5. Z. Pei, A. Y. K. Su, H. L. Hwan, and H. L. Hsiao, Appl. Phys. Lett. 86, 063503 (2005).
6. M. Fukuda, K. Nakagawa, S. Miyazaki, and M. Hirose, Appl. Phys. Lett. 70, 2291 (1997).
7. A. Surawijaya, H. Mizuta, and S. Oda, Jpn. J. Appl. Phys., Part 1 45, 3638 (2006).
8. H. Ikeda, M. Iwasaki, Y. Ishikawa, and M. Tabe, Appl. Phys. Lett. 83, 1456 (2003).
9. C. R. Wang, M. Bierkandt, S. Paprotta, T. Wietler, and K. R. Hofmann, Appl. Phys. Lett. 86, 033111 (2005).
10. B. Berghoff, R. Rölver, D. L. Bätzner, B. Spangenberg, and H. Kurz, Proceedings of the 22nd European Photovoltaic Solar Energy Conference, 2007 (unpublished), p. 571.
11. S. Datta, Electronic Transport in Mesoscopic Systems (Cambridge University Press, Cambridge, 1997), p. 265.
12. T. Mchedlidze, T. Arguirov, S. Kouteva-Arguirova, G. Jia, M. Kittler, R. Rölver, B. Berghoff, M. Först, D. L. Bätzner, and B. Spangenberg, Thin Solid Films 516, 6800 (2008).
13. S. Horiguchi, M. Nagase, K. Shiraishi, H. Kageshima, Y. Takahashi, and K. Murase, Jpn. J. Appl. Phys., Part 2 40, L29 (2001).
14. E. Ungersböck, S. Dhar, G. Karlowatz, V. Sverdlov, H. Kosina, and S. Selberherr, IEEE Trans. Electron Devices 54, 2183 (2007).
15. S. Dhar, E. Ungersböck, H. Kosina, T. Grasser, and S. Selberherr, IEEE Trans. Nanotechnol. 6, 97 (2007).
16. C. Petit, G. Salace, and D. Vuillaume, J. Appl. Phys. 96, 5042 (2004).