Ca F2 SiCa F2 resonant tunneling diodes grown by B surfactant-mediated epitaxy

Applied Physics Letters

Volumn 86, Issue 3, 2005, Pages 1-3

  Wang, C R ^a   Bierkandt, M ^a   Paprotta, S ^a   Wietler, T ^a   Hofmann, K R ^a  

^a LEIBNIZ UNIVERSITY HANNOVER   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CALCIUM COMPOUNDS; CURRENT DENSITY; ELECTRIC CHARGE; ELECTRIC POTENTIAL; ELECTRIC RESISTANCE; ELECTRON TRAPS; HETEROJUNCTIONS; IONIZATION; MOLECULAR BEAM EPITAXY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; RESONANT TUNNELING; SURFACE ACTIVE AGENTS;

CARRIER TRAPPING; NEGATIVE DIFFERENTIAL RESISTANCE (NDR); RESONANT-TUNNELING DIODES (RTD); ROOM TEMPERATURE;

TUNNEL DIODES;

EID: 17044387736     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1853522     Document Type: Article

References (16)

1. M. Asada, M. Watanabe, T. Suemasu, Y. Kohno, and W. Saitoh, J. Vac. Sci. Technol. A 13, 623 (1995).
2. M. Watanabe, T. Funayama, T. Teraji, and N. Sakamaki, Jpn. J. Appl. Phys., Part 2 39, L716 (2000).
3. A. Izumi, Y. Hirai, and K. Tsutsui, and N. S. Sokolov, Appl. Phys. Lett. 67, 2792 (1995).
4. D. Shanarabny, M. Wolf, and D. Gerlich, J. Phys. Chem. Solids 37, 577 (1976).
5. M. Tsutsui, M. Watanabe, and M. Asada, Jpn. J. Appl. Phys., Part 2 38, L920 (1999).
6. M. Watanabe, Y. Iketani, and M. Asada, Jpn. J. Appl. Phys., Part 2 39, L964 (2000).
7. S. Menard, A. N. Kholod, M. Liniger, F. Bassani, V. E. Borisenko, and F. A. Davitaya, Phys. Status Solidi A 181, 561 (2000).
8. M. Liniger, A. N. Kholod, S. Menard, V. E. Borisenko, F. Bassani, G. Guirleo, and F. A. d'Avitaya, J. Appl. Phys. 89, 6281 (2001).
9. C. R. Wang, B. H. Müller, and K. R. Hofmann, Thin Solid Films 410, 72 (2002).
10. C. R. Wang, B. H. Müller, and K. R. Hofmann, Nanotechnology 14, 1192 (2003).
11. C. R. Wang, B. H. Müller, and K. R. Hofmann, Appl. Surf. Sci. 211, 203 (2003).
12. R. W. Fathauer, N. Lewis, E. L. Hall, and L. J. Schowalter, J. Appl. Phys. 60, 3886 (1986).
13. C. R. Wang, B. H. Müller, E. Bugiel, T. Wietler, M. Bierkandt, K. R. Hofmann, and P. Zanmseil, J. Vac. Sci. Technol. A 22, 2246 (2004).
14. M. Copel, M. C. Reuter, E. Kaxiras, and R. M. Trump, Phys. Rev. Lett. 63, 632 (1989).
15. C. R. Wang, B. H. Müller, E. Bugiel, and K. R. Hofmann, IEEE Trans. Nanotechnol. 2, 236 (2003).
16. P. Bedrossian, R. D. Meade, K. Mortensen, D. M. Chen, J. A. Golovchenko, and D. Vanderbilt, Phys. Rev. Lett. 63, 1257 (1989).