Resonant tunneling characteristics in SiO2/Si double-barrier structures in a wide range of applied voltage

Applied Physics Letters

Volumn 83, Issue 7, 2003, Pages 1456-1458

  Ikeda, Hiroya ^a   Iwasaki, Masanori ^a   Ishikawa, Yasuhiko ^a   Tabe, Michiharu ^a  

^a SHIZUOKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC POTENTIAL; IMPACT IONIZATION; KINETIC ENERGY; RESONANT TUNNELING; SEMICONDUCTING SILICON; SILICA; SUBSTRATES;

RESONANT TUNNELING DIODES (RTD);

TUNNEL DIODES;

EID: 0042418692     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1603352     Document Type: Article

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