Room temperature tunneling transport through Si nanodots in silicon rich silicon nitride

Applied Physics Letters

Volumn 86, Issue 6, 2005, Pages 1-3

  Pei, Zingway ^a,b   Su, Alex Y K ^a,b   Hwang, H L ^a,b   Hsiao, H L ^b  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b TUNGHAI UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC RESISTANCE; ELECTRON TRANSITIONS; ELECTRON TUNNELING; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTOR MATERIALS; SILICON; SILICON NITRIDE; TRANSMISSION ELECTRON MICROSCOPY;

DIFFERENTIAL RESISTANCE; HOLE TUNNELING; PEAK-TO-VALLEY RATIOS; SI NANODOTS;

NANOSTRUCTURED MATERIALS;

EID: 18644383561     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1861129     Document Type: Article

References (14)

1. Light Emission in Silicon: From Physics to Devices, edited by, D. J. Lockwood, (Academic, San Diego, 1998).
2. Z. Pei, Y. R. Chang, and H. L. Hwang, Appl. Phys. Lett. 80, 2839 (2002).
3. J. F. Tong, H. L. Hsiao, and H. L. Hwang, Appl. Phys. Lett. 74, 2316 (1999).
4. P. Mazumder, S. Kulkarni, M. Bhattacharya, J. P. Sun, and G. I. Haddad, Proc. IEEE 86, 664 (1998).
5. M. Fukuda, K. Nakagawa, S. Miyazaki, and M. Hirose, Appl. Phys. Lett. 70, 2291 (1997).
6. E. H. Nicollian and R. Tsu, J. Appl. Phys. 74, 4020 (1993).
7. Q. Wan, T. H. Wang, M. Zhu, and C. L. Lin, Appl. Phys. Lett. 81, 538 (2002).
8. Z. Pei and H. L. Hwang, Appl. Surf. Sci. 212-213, 760 (2003).
9. S. Takeoka, M. Fujii, S. Hayashi, and K. Yamamoto, Phys. Rev. B 58, 7921 (1998).
10. Donald A. Neamen, Semiconductor Physics and Devices, 3rd ed. (McGraw-Hill, New York, 2003).
11. M. Lenzlinger and E. H. Snow, J. Appl. Phys. 40, 278 (1969).
12. L. L. Chang, L. Easki, and R. Tsu, Appl. Phys. Lett. 24, 593 (1974).
13. V. Ioannou-Sougleridis and A. G. Nassiopoulou, J. Appl. Phys. 94, 4084 (2003).
14. D. N. Kouvatsos, V. Ioannou-Sougleridis, and A. G. Nassiopoulou, Appl. Phys. Lett. 82, 397 (2003).