Growth of GaAs1-xBix/GaAs multi-quantum wells by molecular beam epitaxy

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 5, Issue 9, 2008, Pages 2719-2721

  Tominaga, Yoriko ^a   Kinoshita, Yusuke ^a   Feng, Gan ^a   Oe, Kunishige ^a   Yoshimoto, Masahiro ^a  

^a KYOTO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

GAAS; HIGH-RESOLUTION X-RAY DIFFRACTION; MULTIQUANTUM WELLS; PEAK ENERGY; PHOTOLUMINESCENCE EMISSION; PL EMISSION; QUANTUM SIZE EFFECTS; ROOM TEMPERATURE; SATELLITE PEAKS; THERMALLY STABLE;

CRYSTAL GROWTH; GALLIUM ALLOYS; GALLIUM ARSENIDE; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; SEMICONDUCTING GALLIUM; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WIRES; X RAY DIFFRACTION;

SEMICONDUCTOR QUANTUM WELLS;

EID: 53349117135     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200779214     Document Type: Conference Paper

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