Structural characterization of GaAs1-xBix alloy by Rutherford backscattering spectrometry combined with the channeling technique

Journal of Electronic Materials

Volumn 32, Issue 1, 2003, Pages 34-37

  Takahiro, Katsumi ^a   Kawatsura, Kiyoshi ^a   Oe, Kunishige ^c   Nishiyama, Fumitaka ^b  

^a KYOTO INSTITUTE OF TECHNOLOGY   (Japan)

^b HIROSHIMA UNIVERSITY   (Japan)

^c NONE

Author keywords

Angular scan; Bi containing semiconductor; Channeling; Metastable GaAs1 xBix alloy; Rutherford backscattering spectrometry; Structural characterization

Indexed keywords

BISMUTH; CRYSTAL LATTICES; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SUBSTRATES;

METASTABLE ALLOYS;

GALLIUM ALLOYS;

EID: 0037242737     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-003-0250-8     Document Type: Article

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