New semiconductor GaNAsBi alloy grown by molecular beam epitaxy

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 43, Issue 7 A, 2004, Pages

  Yoshimoto, Masahiro ^a   Huang, Wei ^a   Takehara, Yuji ^a   Saraie, Junji ^a   Chayahara, Akiyoshi ^b   Horino, Yuji ^b   Kunishige, O E ^a  

^a KYOTO INSTITUTE OF TECHNOLOGY   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

Bismuth; GaNAsBi; MBE; Metastable alloy; RBS; Semimetal semiconductor alloy; X ray diffraction

Indexed keywords

HIGH-ENERGY ELECTRON; METASTABLE ALLOY; MOLAR FRACTION; SEMIMETAL-SEMICONDUCTOR ALLOY;

ALLOYS; APPROXIMATION THEORY; BISMUTH COMPOUNDS; GALLIUM NITRIDE; MOLECULAR BEAM EPITAXY; MULTILAYERS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; X RAY DIFFRACTION ANALYSIS;

SEMICONDUCTOR MATERIALS;

EID: 4444268212     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.43.L845     Document Type: Article

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