Reproducible resistive switching effect for memory applications in heterocontacts based on strongly correlated electron systems

Physics Letters, Section A: General, Atomic and Solid State Physics

Volumn 372, Issue 44, 2008, Pages 6681-6686

  Tulina, N A ^a   Borisenko, I Yu ^b   Sirotkin, V V ^b  

^a RUSSIAN ACADEMY OF SCIENCES   (Russian Federation)

^b INSTITUTE OF MICROELECTRONICS TECHNOLOGY AND HIGH PURITY MATERIALS   (Russian Federation)

Author keywords

Doped dielectric; Electric transport; Electroresistance; High temperature superconductors; Memory element; Memristor; Metal dielectric transition; Phase separation; Resistive switching; Strongly correlated electron systems

Indexed keywords

DIFFUSION; ELECTRIC FIELDS; ELECTRONS; HIGH TEMPERATURE SUPERCONDUCTORS; INTERFACE STATES; MEMRISTORS; OXYGEN; PHASE SEPARATION; RANDOM ACCESS STORAGE; SWITCHING;

ELECTRIC TRANSPORT; ELECTRORESISTANCE; MEMORY ELEMENT; MEMRISTOR; METAL-DIELECTRIC TRANSITION; RESISTIVE SWITCHING; STRONGLY CORRELATED ELECTRON SYSTEM;

PROCESS CONTROL;

EID: 53149083709     PISSN: 03759601     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physleta.2008.09.015     Document Type: Article

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