Frequency dependence of the resistive switching effect in Bi2Sr2CaCu2O8+y/Ag film heterocontacts

Physics Letters, Section A: General, Atomic and Solid State Physics

Volumn 372, Issue 6, 2008, Pages 918-923

  Tulina, N A ^a   Borisenko, I Yu ^b  

^a INSTITUTE OF SOLID STATE PHYSICS   (Russian Federation)

^b INSTITUTE OF MICROELECTRONICS TECHNOLOGY AND HIGH PURITY MATERIALS   (Russian Federation)

Author keywords

Doped dielectric; Electric transport; High temperature superconductor; Metal dielectric transition; Phase separation; Strongly correlated electron systems

Indexed keywords

BISMUTH COMPOUNDS; ELECTRIC FIELDS; HETEROJUNCTIONS; HIGH TEMPERATURE SUPERCONDUCTORS; METAL INSULATOR BOUNDARIES; OXYGEN; PHASE SEPARATION; SEMICONDUCTOR DOPING; SEMICONDUCTOR INSULATOR BOUNDARIES; SEMICONDUCTOR METAL BOUNDARIES; SINGLE CRYSTALS; SWITCHING FREQUENCY;

COLOSSAL ELECTRORESISTANCE; CORRELATION CHARACTERS; ELECTRIC FIELD SWITCHING; ELECTRIC TRANSPORT; ELECTRON INSTABILITY; LOW FREQUENCY ELECTRIC FIELDS; METAL-DIELECTRIC TRANSITION; STRONGLY CORRELATED ELECTRON SYSTEM;

METAL INSULATOR TRANSITION;

EID: 38149002136     PISSN: 03759601     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physleta.2007.08.045     Document Type: Article

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