In situ monitoring and real-time control of gate hardmask etching in high-volume manufacturing of ICs

Journal of the Electrochemical Society

Volumn 155, Issue 11, 2008, Pages

  Chen, Lele ^a,b   Jiang, Weinan ^c   Pao, Todd ^c   Lin, Bill ^c   Xu, Linda ^c   Ji, Gaoming ^c   Cai, Hui ^c  

^a SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

^b UNIVERSITY OF CHINESE ACADEMY OF SCIENCES   (China)

^c SEMICONDUCTOR MANUFACTURING INTERNATIONAL CORPORATION   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC SPECTROSCOPY; DIAMOND FILMS; ELECTRONICS INDUSTRY; EMISSION SPECTROSCOPY; ETCHING; INTEGRATED CIRCUITS; LEAKAGE (FLUID); MOLECULAR SPECTROSCOPY; OPTICAL EMISSION SPECTROSCOPY; OXIDE MINERALS; PHOTORESISTS; PLASMA DEPOSITION; PLASMAS; QUARTZ; QUARTZ CRYSTAL MICROBALANCES; REAL TIME CONTROL; REAL TIME SYSTEMS;

CHAMBER WALLS; CONTROL PROCESSING; CRITICAL DIMENSIONS; ETCH RATES; FLUOROCARBON PLASMAS; HARD MASKS; HIGH-VOLUME MANUFACTURING; IN-SITU MONITORING; PHYSICAL DIMENSIONS; PLASMA GAS PHASE; POLYMER DEPOSITION; POST PROCESSING; QUARTZ CRYSTAL MICRO-BALANCE; REAL-TIME CONTROLS; REPRODUCIBILITY;

EMISSION CONTROL;

EID: 52649090169     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2971022     Document Type: Article

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