Radical behavior in fluorocarbon plasma and control of silicon oxide etching by injection of radicals

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 12 SUPPL. B, 1996, Pages 6521-6527

  Goto, Toshio ^a   Hori, Masaru ^a  

^a NAGOYA UNIVERSITY   (Japan)

Author keywords

CFx radical; ECR plasma; Fluorocarbon plasma; Infrared diode laser absorption spectroscopy (IRLAS); Radical; Radical injection technique (RIT); Silicon oxide etching

Indexed keywords

EID: 0000338884     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.6521     Document Type: Article

References (23)

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