Direct spectroscopic evidence of the influence of chamber wall condition on oxide etch rate

Plasma Chemistry and Plasma Processing

Volumn 19, Issue 2, 1999, Pages 285-298

  Lee, Szetsen ^a   Tien, Yu Chung ^a   Hsu, Chin Fa ^a  

^a WINBOND ELECTRONICS CORPORATION   (Taiwan)

Author keywords

Deposition; Emission; Etch; Fluorocarbon; Hysteresis; Le chatelier's principle; Oxide; Plasma; Polymer

Indexed keywords

EID: 0033246897     PISSN: 02724324     EISSN: None     Source Type: Journal    
DOI: 10.1023/A:1021699826946     Document Type: Article

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