메뉴 건너뛰기




Volumn 18, Issue 17, 2008, Pages 2535-2540

Defect tolerance and nanomechanics in transistors that use semiconductor nanomaterials and ultrathin dielectrics

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC MATERIALS; ELECTRIC CONDUCTIVITY; GATE DIELECTRICS; GATES (TRANSISTOR); HAFNIUM COMPOUNDS; MECHANICS; MOLECULAR BEAM EPITAXY; MOS CAPACITORS; NANOSTRUCTURED MATERIALS; NONMETALS; PAINTING; SELF ASSEMBLED MONOLAYERS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR MATERIALS; SILICON; SPEED; THICK FILMS; TRANSISTORS;

EID: 52449124749     PISSN: 1616301X     EISSN: 16163028     Source Type: Journal    
DOI: 10.1002/adfm.200800176     Document Type: Article
Times cited : (8)

References (25)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.