Metal nanocrystal/nitride heterogeneous-stack floating gate memory

Device Research Conference - Conference Digest, DRC

Volumn 2005, Issue , 2005, Pages 97-98

  Lee, Chungho ^a   Hou, Tuo Hung ^a   Kan, Edwin C ^a  

^a School of Operations Research and Industrial Engineering   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC ENERGY STORAGE; FLASH MEMORY; NANOSTRUCTURED MATERIALS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICON NITRIDE;

DIRECT TUNNELING PROGRAMMING; FLASH MEMORY DEVICES; FLOATING GATE MEMORY; NANOCRYSTALS;

NONVOLATILE STORAGE;

EID: 33751315522     PISSN: 15483770     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/DRC.2005.1553073     Document Type: Conference Paper

References (4)

1. N. Flaherty, IEE Review, p. 50, 2003.
2. S. Yamazaki, et al., IEDM, p. 355, 1973.
3. R.F. Steimle, et al., ICSSDM, p. 848, 2003.
4. C. Lee, et al, IEDM, p. 557, 2003.