-
1
-
-
0004038844
-
-
Kluwer Academic Publishers, Boston
-
P. Cappelletti et al, "Flash Memories", Kluwer Academic Publishers, Boston, 1999.
-
(1999)
Flash Memories
-
-
Cappelletti, P.1
-
2
-
-
0034453547
-
A novel aerosol nanocrystal floating gate device for nonvolatile memory application
-
J D Blauwe, "A novel aerosol nanocrystal floating gate device for nonvolatile memory application", IEDM Tech. Dig. 2000, pp. 683-686.
-
(2000)
IEDM Tech. Dig
, pp. 683-686
-
-
Blauwe, J.D.1
-
3
-
-
8144221080
-
Nonvolatile Flash Memory Device Using Ge Nanocrystals Embedded in HfAlO High-k Tunneling and Control Oxides: Device Fabrication and Electrical Performance
-
Jing-Hao Chen et al, "Nonvolatile Flash Memory Device Using Ge Nanocrystals Embedded in HfAlO High-k Tunneling and Control Oxides: Device Fabrication and Electrical Performance", IEEE Trans on Electron Devices, 2004, pp. 1840-1848.
-
(2004)
IEEE Trans on Electron Devices
, pp. 1840-1848
-
-
Chen, J.-H.1
-
4
-
-
0041409576
-
Impact of crystal size and tunnel dielectric on semiconductor nanocrystal memory performance
-
Sept
-
Min She, Tsu-Jae King, "Impact of crystal size and tunnel dielectric on semiconductor nanocrystal memory performance", IEEE Trans on Electron Devices, Vol. 50, pp. 1934-1940, Sept. 2003.
-
(2003)
IEEE Trans on Electron Devices
, vol.50
, pp. 1934-1940
-
-
She, M.1
King, T.-J.2
-
5
-
-
0036714604
-
Metal Nanocrystal Memories-Part I: Device Design and Fabrication
-
Z. Liu et al, "Metal Nanocrystal Memories-Part I: Device Design and Fabrication", IEEE Trans on Electron Devices, 2002, Vol. 49, pp. 1606-1613.
-
(2002)
IEEE Trans on Electron Devices
, vol.49
, pp. 1606-1613
-
-
Liu, Z.1
-
6
-
-
0036715044
-
Metal Nanocrystal Memories-Part II: Electrical Characteristics
-
Z. Liu et al, "Metal Nanocrystal Memories-Part II: Electrical Characteristics", IEEE Trans on Electron Devices 2002, Vol. 49, pp. 1614-1622.
-
(2002)
IEEE Trans on Electron Devices
, vol.49
, pp. 1614-1622
-
-
Liu, Z.1
-
7
-
-
17444382701
-
Metal nanocrystal memory with high-k tunneling barrier for improved data retention
-
Apr
-
J. J. Lee et al, "Metal nanocrystal memory with high-k tunneling barrier for improved data retention", IEEE Trans on Electron Devices, 52, pp. 507-511, Apr. 2005.
-
(2005)
IEEE Trans on Electron Devices
, vol.52
, pp. 507-511
-
-
Lee, J.J.1
-
8
-
-
33847725490
-
-
Samanta S K et al, S. K. Samanta et al, Enhancement of memory window in short channel non-volatile memory devices using double layer tungsten nanocrystals, IEDM Tech Dig 2005, pp. 170-173. IEDM Tech. Dig. 2005, pp. 170-173.
-
Samanta S K et al, S. K. Samanta et al, "Enhancement of memory window in short channel non-volatile memory devices using double layer tungsten nanocrystals", IEDM Tech Dig 2005, pp. 170-173. IEDM Tech. Dig. 2005, pp. 170-173.
-
-
-
-
9
-
-
33846288441
-
T shift in discrete-trap memories
-
T shift in discrete-trap memories", IRPS 2004, pp. 515-521.
-
IRPS 2004
, pp. 515-521
-
-
Ielmini, D.1
-
10
-
-
17444379707
-
Modeling of tunneling P/E for nanocrystal memories
-
Apr
-
C. M. Compagnoni, D. Ielmini, A. S. Spinelli, A. L. Lacaita, "Modeling of tunneling P/E for nanocrystal memories", IEEE Tran on. Electron Devices, 52, pp. 569-576, Apr. 2005.
-
(2005)
IEEE Tran on. Electron Devices
, vol.52
, pp. 569-576
-
-
Compagnoni, C.M.1
Ielmini, D.2
Spinelli, A.S.3
Lacaita, A.L.4
-
11
-
-
32344438241
-
Electrostatic coupling between nanocrystals in a quantum flash memory
-
Feb
-
A. S. Cordan, Y. Leroy, B. Leriche, "Electrostatic coupling between nanocrystals in a quantum flash memory", Solid State Electronics, Vol. 50, Feb. 2006.
-
(2006)
Solid State Electronics
, vol.50
-
-
Cordan, A.S.1
Leroy, Y.2
Leriche, B.3
-
12
-
-
39749136377
-
-
CAPEM©
-
CAPEM© http://www.ee.iitb.ac.in/∼vlsi/research/software/ capex/capext.html
-
-
-
-
13
-
-
0028430427
-
2 Breakdown Model for Very Low Voltage Lifetime Extrapolation
-
May
-
2 Breakdown Model for Very Low Voltage Lifetime Extrapolation", IEEE Trans on Electron Devices, Vol. 41, No. 5, May 1994, pp. 761-767.
-
(1994)
IEEE Trans on Electron Devices
, vol.41
, Issue.5
, pp. 761-767
-
-
Schuegraf, K.F.1
Hu, C.2
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