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Volumn , Issue , 2007, Pages 197-202

Extensive reliability analysis of tungsten dot NC devices embedded in HfAlO high-k dielectric under NAND (FN/FN) operation

Author keywords

[No Author keywords available]

Indexed keywords

CIRCUIT SIMULATION; COMPUTATIONAL EFFICIENCY; LOGIC GATES; MATHEMATICAL MODELS; RELIABILITY ANALYSIS; TUNGSTEN;

EID: 39749179836     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IPFA.2007.4378084     Document Type: Conference Paper
Times cited : (2)

References (13)
  • 1
    • 0004038844 scopus 로고    scopus 로고
    • Kluwer Academic Publishers, Boston
    • P. Cappelletti et al, "Flash Memories", Kluwer Academic Publishers, Boston, 1999.
    • (1999) Flash Memories
    • Cappelletti, P.1
  • 2
    • 0034453547 scopus 로고    scopus 로고
    • A novel aerosol nanocrystal floating gate device for nonvolatile memory application
    • J D Blauwe, "A novel aerosol nanocrystal floating gate device for nonvolatile memory application", IEDM Tech. Dig. 2000, pp. 683-686.
    • (2000) IEDM Tech. Dig , pp. 683-686
    • Blauwe, J.D.1
  • 3
    • 8144221080 scopus 로고    scopus 로고
    • Nonvolatile Flash Memory Device Using Ge Nanocrystals Embedded in HfAlO High-k Tunneling and Control Oxides: Device Fabrication and Electrical Performance
    • Jing-Hao Chen et al, "Nonvolatile Flash Memory Device Using Ge Nanocrystals Embedded in HfAlO High-k Tunneling and Control Oxides: Device Fabrication and Electrical Performance", IEEE Trans on Electron Devices, 2004, pp. 1840-1848.
    • (2004) IEEE Trans on Electron Devices , pp. 1840-1848
    • Chen, J.-H.1
  • 4
    • 0041409576 scopus 로고    scopus 로고
    • Impact of crystal size and tunnel dielectric on semiconductor nanocrystal memory performance
    • Sept
    • Min She, Tsu-Jae King, "Impact of crystal size and tunnel dielectric on semiconductor nanocrystal memory performance", IEEE Trans on Electron Devices, Vol. 50, pp. 1934-1940, Sept. 2003.
    • (2003) IEEE Trans on Electron Devices , vol.50 , pp. 1934-1940
    • She, M.1    King, T.-J.2
  • 5
    • 0036714604 scopus 로고    scopus 로고
    • Metal Nanocrystal Memories-Part I: Device Design and Fabrication
    • Z. Liu et al, "Metal Nanocrystal Memories-Part I: Device Design and Fabrication", IEEE Trans on Electron Devices, 2002, Vol. 49, pp. 1606-1613.
    • (2002) IEEE Trans on Electron Devices , vol.49 , pp. 1606-1613
    • Liu, Z.1
  • 6
    • 0036715044 scopus 로고    scopus 로고
    • Metal Nanocrystal Memories-Part II: Electrical Characteristics
    • Z. Liu et al, "Metal Nanocrystal Memories-Part II: Electrical Characteristics", IEEE Trans on Electron Devices 2002, Vol. 49, pp. 1614-1622.
    • (2002) IEEE Trans on Electron Devices , vol.49 , pp. 1614-1622
    • Liu, Z.1
  • 7
    • 17444382701 scopus 로고    scopus 로고
    • Metal nanocrystal memory with high-k tunneling barrier for improved data retention
    • Apr
    • J. J. Lee et al, "Metal nanocrystal memory with high-k tunneling barrier for improved data retention", IEEE Trans on Electron Devices, 52, pp. 507-511, Apr. 2005.
    • (2005) IEEE Trans on Electron Devices , vol.52 , pp. 507-511
    • Lee, J.J.1
  • 8
    • 33847725490 scopus 로고    scopus 로고
    • Samanta S K et al, S. K. Samanta et al, Enhancement of memory window in short channel non-volatile memory devices using double layer tungsten nanocrystals, IEDM Tech Dig 2005, pp. 170-173. IEDM Tech. Dig. 2005, pp. 170-173.
    • Samanta S K et al, S. K. Samanta et al, "Enhancement of memory window in short channel non-volatile memory devices using double layer tungsten nanocrystals", IEDM Tech Dig 2005, pp. 170-173. IEDM Tech. Dig. 2005, pp. 170-173.
  • 9
    • 33846288441 scopus 로고    scopus 로고
    • T shift in discrete-trap memories
    • T shift in discrete-trap memories", IRPS 2004, pp. 515-521.
    • IRPS 2004 , pp. 515-521
    • Ielmini, D.1
  • 11
    • 32344438241 scopus 로고    scopus 로고
    • Electrostatic coupling between nanocrystals in a quantum flash memory
    • Feb
    • A. S. Cordan, Y. Leroy, B. Leriche, "Electrostatic coupling between nanocrystals in a quantum flash memory", Solid State Electronics, Vol. 50, Feb. 2006.
    • (2006) Solid State Electronics , vol.50
    • Cordan, A.S.1    Leroy, Y.2    Leriche, B.3
  • 12
    • 39749136377 scopus 로고    scopus 로고
    • CAPEM©
    • CAPEM© http://www.ee.iitb.ac.in/∼vlsi/research/software/ capex/capext.html
  • 13
    • 0028430427 scopus 로고
    • 2 Breakdown Model for Very Low Voltage Lifetime Extrapolation
    • May
    • 2 Breakdown Model for Very Low Voltage Lifetime Extrapolation", IEEE Trans on Electron Devices, Vol. 41, No. 5, May 1994, pp. 761-767.
    • (1994) IEEE Trans on Electron Devices , vol.41 , Issue.5 , pp. 761-767
    • Schuegraf, K.F.1    Hu, C.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.