Near-infrared spectroscopic photon emission microscopy of 0.13 μm silicon nMOSFETs and pMOSFETs

Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA

Volumn , Issue , 2008, Pages

  Tan, S L ^a   Teo, J K J ^a   Toh, K H ^a   Isakov, D ^a   Chan, D S H ^a   Koh, L S ^b   Chua, C M ^b   Phang, J C H ^a,b  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b SEMICAPS Corporation   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC SPECTROSCOPY; DIGITAL CIRCUITS; ELECTRIC BREAKDOWN; ELECTRIC FIELDS; ELECTRIC NETWORK ANALYSIS; ELECTROMAGNETIC FIELD THEORY; ELECTROMAGNETIC FIELDS; ELECTRONICS INDUSTRY; FAILURE ANALYSIS; INFRARED DEVICES; INFRARED SPECTROSCOPY; INTEGRATED CIRCUITS; MOLECULAR SPECTROSCOPY; MOSFET DEVICES; NONMETALS; PHOTONS; QUALITY ASSURANCE; RELIABILITY; SAFETY FACTOR; SENSITIVITY ANALYSIS; SILICON; TECHNICAL PRESENTATIONS;

DRAIN BIAS; GA TE LENGTHS; HIGH SENSITIVITIES; INTERNATIONAL SYMPOSIUM; N-MOSFETS; NEAR INFRA-RED; P-MOSFETS; PHOTON EMISSION MICROSCOPY; PHOTON EMISSION SPECTROSCOPY; PHOTON EMISSIONS;

EMISSION SPECTROSCOPY;

EID: 51949094241     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IPFA.2008.4588178     Document Type: Conference Paper

References (14)

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