Near-IR photon emission spectroscopy on strained and unstrained 60 nm silicon nMOSFETs

Conference Proceedings from the International Symposium for Testing and Failure Analysis

Volumn , Issue , 2007, Pages 81-85

  Tan, S L ^a   Ang, K W ^a   Toh, K H ^a   Isakov, D ^a   Chua, C M ^b   Koh, L S ^b   Yeo, Y C ^a   Chan, D S H ^a   Phang, J C H ^a,b  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b SEMICAPS Corporation   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

BAND-GAP NARROWING; GA TE LENGTHS; INTERNATIONAL SYMPOSIUM; N-MOSFET; N-MOSFETS; NEAR-IR; PHOTON EMISSION SPECTROSCOPY; PHOTON EMISSIONS; SPECTRAL ANALYSES;

AIR POLLUTION; ATOMIC SPECTROSCOPY; ELECTRIC BREAKDOWN; FAILURE ANALYSIS; MOLECULAR SPECTROSCOPY; NONMETALS; PHOTONS; QUALITY ASSURANCE; RELIABILITY; SAFETY FACTOR; SEMICONDUCTOR MATERIALS; SILICON; SPECTRUM ANALYSIS; SPECTRUM ANALYZERS; SPEECH;

EMISSION SPECTROSCOPY;

EID: 49649099261     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (14)

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