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Volumn 29, Issue 5, 1996, Pages 1380-1385

Spectroscopic observations of photon emissions in n-MOSFETs in the saturation region

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; ELECTRONS; HOT CARRIERS; LIGHT EMISSION; PHOTOMULTIPLIERS; PHOTONS; SPECTROSCOPY; SUBSTRATES;

EID: 4243161126     PISSN: 00223727     EISSN: None     Source Type: Journal    
DOI: 10.1088/0022-3727/29/5/039     Document Type: Article
Times cited : (14)

References (14)
  • 1
    • 0020829018 scopus 로고
    • Spatially resolved observation of visible-light emission from Si MOSFET's
    • Tam S, Hsu F C, Ko P K , Hu C and Muller R S 1983 Spatially resolved observation of visible-light emission from Si MOSFET's IEEE Electron Device Lett. 4 386-8
    • (1983) IEEE Electron Device Lett. , vol.4 , pp. 386-388
    • Tam, S.1    Hsu, F.C.2    Ko, P.K.3    Hu, C.4    Muller, R.S.5
  • 2
    • 0020781254 scopus 로고
    • Evidence of optical generation of minority carriers from saturated MOS transistors
    • Childs P A, Stuart R A and Eccleston W 1983 Evidence of optical generation of minority carriers from saturated MOS transistors Solid-State Electron. 26 685-8
    • (1983) Solid-State Electron. , vol.26 , pp. 685-688
    • Childs, P.A.1    Stuart, R.A.2    Eccleston, W.3
  • 3
    • 0021482804 scopus 로고
    • Hot-electron-induced photon and photocarrier generation in silicon MOSFET's
    • Tam S and Hu C 1984 Hot-electron-induced photon and photocarrier generation in silicon MOSFET's IEEE Trans. Electron Devices 31 1264-73
    • (1984) IEEE Trans. Electron Devices , vol.31 , pp. 1264-1273
    • Tam, S.1    Hu, C.2
  • 4
    • 0008452633 scopus 로고
    • Emission mechanism and bias-dependent emission efficiency of photons induced by drain avalanche in Si MOSFET's
    • Tsuchiya T and Nakajima S 1985 Emission mechanism and bias-dependent emission efficiency of photons induced by drain avalanche in Si MOSFET's IEEE Trans. Electron Devices 32 405-12
    • (1985) IEEE Trans. Electron Devices , vol.32 , pp. 405-412
    • Tsuchiya, T.1    Nakajima, S.2
  • 5
    • 84954146509 scopus 로고
    • Experimental verification of the mechanism of hot-carrier-induced photon emission in n-MOSFET's with a CCD gate structure
    • Wong H S 1991 Experimental verification of the mechanism of hot-carrier-induced photon emission in n-MOSFET's with a CCD gate structure IEEE Electron Devices Meeting pp 549-52
    • (1991) IEEE Electron Devices Meeting , pp. 549-552
    • Wong, H.S.1
  • 7
    • 0022313935 scopus 로고
    • Experimental determination of hot-carrier energy distribution and minority carrier generation mechanism due to hot-carrier effects
    • Toriumi A, Yoshimi M, Iwase M and Taniguchi K 1985 Experimental determination of hot-carrier energy distribution and minority carrier generation mechanism due to hot-carrier effects IEDM Technical Digest pp 56-9
    • (1985) IEDM Technical Digest , pp. 56-59
    • Toriumi, A.1    Yoshimi, M.2    Iwase, M.3    Taniguchi, K.4
  • 10
    • 0019635233 scopus 로고
    • Optical properties of phosphorus-doped polycrystalline silicon layers
    • Lubberts G, Burkey B C, Moser F and Trabka E A 1981 Optical properties of phosphorus-doped polycrystalline silicon layers J. Appl. Phys. 52 6870-8
    • (1981) J. Appl. Phys. , vol.52 , pp. 6870-6878
    • Lubberts, G.1    Burkey, B.C.2    Moser, F.3    Trabka, E.A.4
  • 11
    • 0020208332 scopus 로고
    • Correlation between substrate and gate currents in MOSFET's
    • Tam S, Ko P, Hu C and Muller R S 1982 Correlation between substrate and gate currents in MOSFET's IEEE Trans. Electron Devices 29 1740-4
    • (1982) IEEE Trans. Electron Devices , vol.29 , pp. 1740-1744
    • Tam, S.1    Ko, P.2    Hu, C.3    Muller, R.S.4
  • 13
    • 0001136609 scopus 로고
    • Hot-carrier luminescence in Si
    • Bude J, Sano N and Yoshii A 1992 Hot-carrier luminescence in Si Phys. Rev. B 45 5848-56
    • (1992) Phys. Rev. B , vol.45 , pp. 5848-5856
    • Bude, J.1    Sano, N.2    Yoshii, A.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.