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Semiconductor Science and Technology

Volumn 23, Issue 9, 2008, Pages

Parallel conduction in p-type gallium nitride homo-structures

(6) Litwin Staszewska, E a Konczewicz, L b,c Piotrzkowski, R a Dmowski, L a Czernecki, R a Prystawko, P a

a POLISH ACADEMY OF SCIENCES (Poland)

b UNIV MONTPELLIER (France)

c UNIVERSITÉ MONTPELLIER 2 (France)

Author keywords

[No Author keywords available]

Indexed keywords

BUFFER LAYERS; CORUNDUM; ELECTRIC CURRENTS; ELECTRIC FIELDS; ELECTROMAGNETIC FIELD THEORY; ELECTROMAGNETIC FIELDS; EPITAXIAL LAYERS; GALLIUM ALLOYS; GALLIUM COMPOUNDS; GALLIUM NITRIDE; GALVANOMAGNETIC EFFECTS; HALL EFFECT; HEAT CONDUCTION; LIGHT METALS; MAGNESIUM; MAGNETIC FIELD EFFECTS; NITRIDES; NONMETALS; OPTICAL WAVEGUIDES; SEMICONDUCTING GALLIUM; SILICON;

CONDUCTION PROCESSES; ELECTRIC FIELD INTENSITIES; ELECTRICAL CONDUCTION; ELECTRICAL TRANSPORT; GALLIUM NITRIDE (GAN); GAN BUFFER LAYERS; MULTI LAYERING; PARALLEL CONDUCTION; SAPPHIRE SUBSTRATES; STRUCTURES GROWN; TWO TYPES;

ELECTRIC NETWORK ANALYSIS;

EID: 51849149831 PISSN: 02681242 EISSN: 13616641 Source Type: Journal
DOI: 10.1088/0268-1242/23/9/095007 Document Type: Article

Times cited : (2)

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