Kinetics of low-temperature activation of acceptors in magnesium-doped gallium nitride epilayers grown by metal-organic vapor-phase epitaxy

Journal of Applied Physics

Volumn 99, Issue 3, 2006, Pages

  Litwin Staszewska, E ^a   Piotrzkowski, R ^a   Dmowski, L ^a   Prystawko, P ^a   Czernecki, R ^a   Konczewicz, L ^b  

^a POLISH ACADEMY OF SCIENCES   (Poland)

^b UNIVERSITÉ MONTPELLIER 2   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ANNEALING; DISSOCIATION; IONIZATION; MAGNESIUM PRINTING PLATES; VAPOR PHASE EPITAXY;

ELECTRICAL TRANSPORT PROPERTIES; IONIZATION ENERGY; ISOTHERMAL MEASUREMENTS; MAGNESIUM-HYDROGEN COMPLEXES;

GALLIUM NITRIDE;

EID: 33645539293     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2168232     Document Type: Article

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