메뉴 건너뛰기




Volumn , Issue , 2008, Pages 219-224

Statistical evaluation for anomalous SILC of tunnel oxide using integrated array TEG

Author keywords

[No Author keywords available]

Indexed keywords

CLARIFICATION; DATA STORAGE EQUIPMENT; ELECTRIC CURRENTS; ELECTRON TUNNELING; LEAKAGE CURRENTS; RELIABILITY; TEMPERATURE MEASUREMENT; THERMOELECTRIC EQUIPMENT;

EID: 51549113639     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2008.4558890     Document Type: Conference Paper
Times cited : (12)

References (16)
  • 1
    • 0024170325 scopus 로고
    • Stress induced leakage current limiting to scale down EEPROM tunnel oxide thickness
    • K. Naruke, S. Taguchi and M. Wada, "Stress induced leakage current limiting to scale down EEPROM tunnel oxide thickness", IEDM Tech. Dig., pp.424-427, 1988.
    • (1988) IEDM Tech. Dig , pp. 424-427
    • Naruke, K.1    Taguchi, S.2    Wada, M.3
  • 7
    • 0027306901 scopus 로고
    • Novel read disturb failure mechanism induced by flash cycling
    • A. Brand, K. Wu. S. Pan and D. Chin, "Novel read disturb failure mechanism induced by flash cycling", Proc. Int. Reliability Phys. Symp., 1993, pp. 127-132.
    • (1993) Proc. Int. Reliability Phys. Symp , pp. 127-132
    • Brand, A.1    Pan, K.W.S.2    Chin, D.3
  • 11
    • 0027592414 scopus 로고
    • Correlation of stress-induced leakage current in thin oxides with trap generation inside the oxides
    • May
    • D. J. Dumin and J. R. Maddux, "Correlation of stress-induced leakage current in thin oxides with trap generation inside the oxides" IEEE Trans. Electron Devices, vol. 40, no. 5, pp. 986-993, May 1993.
    • (1993) IEEE Trans. Electron Devices , vol.40 , Issue.5 , pp. 986-993
    • Dumin, D.J.1    Maddux, J.R.2
  • 12
    • 85056969203 scopus 로고
    • Stress-induced current in thin silicon dioxide films
    • R. Moazzami and C. Hu, "Stress-induced current in thin silicon dioxide films", IEDM Tech. Dig., pp. 139-142, 1992.
    • (1992) IEDM Tech. Dig , pp. 139-142
    • Moazzami, R.1    Hu, C.2
  • 14
    • 0033080259 scopus 로고    scopus 로고
    • Experimental evidence of inelastic tunneling in stress-induced leakage current
    • Feb
    • S. Takagi, N. Yasuda and A. Toriumi, "Experimental evidence of inelastic tunneling in stress-induced leakage current", IEEE Trans. Electron Devices, vol. 46, no. 2, pp. 335-341, Feb. 1999.
    • (1999) IEEE Trans. Electron Devices , vol.46 , Issue.2 , pp. 335-341
    • Takagi, S.1    Yasuda, N.2    Toriumi, A.3
  • 15
    • 0033080327 scopus 로고    scopus 로고
    • A new I-V model for stress-induced leakage current including inelastic tunneling
    • Feb
    • S. Takagi, N. Yasuda and A. Toriumi, "A new I-V model for stress-induced leakage current including inelastic tunneling", IEEE Trans. Electron Devices, vol.46, no. 2, pp. 348-354, Feb. 1999.
    • (1999) IEEE Trans. Electron Devices , vol.46 , Issue.2 , pp. 348-354
    • Takagi, S.1    Yasuda, N.2    Toriumi, A.3
  • 16
    • 0030785003 scopus 로고    scopus 로고
    • Electrical stress-induced variable range hopping conduction in ultrathin silicon dioxides
    • Jan
    • K. Okada and K. Taniguchi, "Electrical stress-induced variable range hopping conduction in ultrathin silicon dioxides", Appl. Phys. Lett., vol. 70, pp. 351-353, Jan. 1997.
    • (1997) Appl. Phys. Lett , vol.70 , pp. 351-353
    • Okada, K.1    Taniguchi, K.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.