Impact of nitridation engineering on microscopic SILC characteristics of sub-10-nm tunnel dielectrics

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1998, Pages 597-600

  Ogata, T ^a   Inoue, M ^a   Nakamura, T ^a   Tsuji, N ^a   Kobayashi, K ^a   Kawase, K ^a   Kurokawa, H ^a   Kaneoka, T ^a   Ohno, Y ^a   Miyoshi, H ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

GATES (TRANSISTOR); INDUCED CURRENTS; LEAKAGE CURRENTS; MOS CAPACITORS; MOSFET DEVICES; NITRIDING; NITROGEN OXIDES; ULTRATHIN FILMS;

STRESS INDUCED LEAKAGE CURRENTS (SILC); TUNNEL DIELECTRICS;

DIELECTRIC FILMS;

EID: 0032255097     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)