-
1
-
-
0032254714
-
Progress Toward 10nm CMOS Devices
-
Timp G, Bourdelle K K, Bower J E, Baumann F H, Boone T, Cirelli R, Evans-Lutterodt K, Garno J, Ghetti A, Gossmann H, Green M, Jacobson D, Kim Y, Kleiman R, Klemens F, Kornblit A, Lochstampfor C, Mansfield W, Moccio S, Muller D A, Ocola L E, O'Malley M L, Rosamilia J, Sapjeta J, Silverman P, Sorsch T, Tennant D M, Timp W, and Weir B (1998) Progress Toward 10nm CMOS Devices. IEDM Technical Digest, pp. 615-618.
-
(1998)
IEDM Technical Digest
, pp. 615-618
-
-
Timp, G.1
Bourdelle, K.K.2
Bower, J.E.3
Baumann, F.H.4
Boone, T.5
Cirelli, R.6
Evans-Lutterodt, K.7
Garno, J.8
Ghetti, A.9
Gossmann, H.10
Green, M.11
Jacobson, D.12
Kim, Y.13
Kleiman, R.14
Klemens, F.15
Kornblit, A.16
Lochstampfor, C.17
Mansfield, W.18
Moccio, S.19
Muller, D.A.20
Ocola, L.E.21
O'Malley, M.L.22
Rosamilia, J.23
Sapjeta, J.24
Silverman, P.25
Sorsch, T.26
Tennant, D.M.27
Timp, W.28
Weir, B.29
more..
-
2
-
-
0001663154
-
Excess silicon at the silicon nitride/thermal oxide interface in oxide-nitride-oxide structures
-
Gritsenko V A, Wong H, Xu J B, Kwok R M, Pertness I P, Zaitsev B A, Morokov Y N, and Novikov Y N (1999) Excess silicon at the silicon nitride/thermal oxide interface in oxide-nitride-oxide structures. J. Appl. Phys. 86: 3234-3240.
-
(1999)
J. Appl. Phys.
, vol.86
, pp. 3234-3240
-
-
Gritsenko, A.V.1
Wong, H.2
Xu, J.B.3
Kwok, R.M.4
Pertness, I.P.5
Zaitsev, B.A.6
Morokov, Y.N.7
Novikov, Y.N.8
-
3
-
-
0034350496
-
2 thickness determination by x-ray photoelectron spectroscopy, Auger electron spectroscopy, secondary ion mass spectrometry, Rutherford backscattering, transmission electron microscopy, and ellipsometry
-
2 thickness determination by x-ray photoelectron spectroscopy, Auger electron spectroscopy, secondary ion mass spectrometry, Rutherford backscattering, transmission electron microscopy, and ellipsometry. J. Vac. Sci. Technol. B 18: 440-444.
-
(2000)
J. Vac. Sci. Technol.
, vol.B18
, pp. 440-444
-
-
Cole, D.A.1
Shallenberger, J.R.2
Novak, S.W.3
Moore, R.L.4
Edgell, M.J.5
Smith, S.P.6
Hitzman, C.J.7
Kirchhoff, J.F.8
Principe, E.9
Nieveen, W.10
Huang, F.K.11
Biswas, S.12
Bleier, R.J.13
Jones, K.14
-
4
-
-
0033729190
-
2O-grown oxynitride
-
2O-grown oxynitride. J. Electrochem. Soc. 147: 1888-1892.
-
(2000)
J. Electrochem. Soc.
, vol.147
, pp. 1888-1892
-
-
Teramoto, A.1
Umeda, H.2
Tamamura, H.3
Nishida, Y.4
Sayama, H.5
Terada, K.6
Kawase, K.7
Ohno, Y.8
Shigetomi, A.9
-
5
-
-
0033746234
-
High performance sub-0.25 μm devices using ultrathin oxide-nitride-oxide gate dielectric formed with low pressure oxidation and chemical vapor deposition
-
Ma Y, Lee J L, and Carroll M S (2000) High performance sub-0.25 μm devices using ultrathin oxide-nitride-oxide gate dielectric formed with low pressure oxidation and chemical vapor deposition. IEEE Electron Device Letters 21: 316-318.
-
(2000)
IEEE Electron Device Letters
, vol.21
, pp. 316-318
-
-
Ma, Y.1
Lee, J.L.2
Carroll, M.S.3
-
6
-
-
0002719933
-
Gate dielectric metrology using advanced TEM measurements
-
Muller D A (2001) Gate dielectric metrology using advanced TEM measurements. AIP Conference Proceedings 550: 500-505.
-
(2001)
AIP Conference Proceedings
, vol.550
, pp. 500-505
-
-
Muller, D.A.1
-
7
-
-
0033600230
-
The electronic structure at the atomic scale of ultrathin gate oxides
-
Muller D A, Sorsch T, Moccio S, Baumarm F H, Evans-Lutterodt K, and Timp G (1999) The electronic structure at the atomic scale of ultrathin gate oxides. Nature 399: 758-761.
-
(1999)
Nature
, vol.399
, pp. 758-761
-
-
Muller, D.A.1
Sorsch, T.2
Moccio, S.3
Baumarm, F.H.4
Evans-Lutterodt, K.5
Timp, G.6
-
8
-
-
0030670238
-
Chemical shift mapping of Si L and K edges using spatially resolved EELS and energy-filtering TEM
-
Kimoto K, Sekiguchi T, and Aoyama T (1997) Chemical shift mapping of Si L and K edges using spatially resolved EELS and energy-filtering TEM. J. Electron. Microsc. 46: 369-374.
-
(1997)
J. Electron Microsc.
, vol.46
, pp. 369-374
-
-
Kimoto, K.1
Sekiguchi, T.2
Aoyama, T.3
-
9
-
-
0035024715
-
Time-resolved acquisition technique for elemental mapping by energy-filtering TEM
-
Terada S, Aoyama T, Yano F, and Mitsui Y (2001) Time-resolved acquisition technique for elemental mapping by energy-filtering TEM. J. Electron Microsc. 50: 83-87.
-
(2001)
J. Electron Microsc.
, vol.50
, pp. 83-87
-
-
Terada, S.1
Aoyama, T.2
Yano, F.3
Mitsui, Y.4
-
10
-
-
0004117631
-
Computer vision
-
Prentice Hall, Inc., Englewood Cliffs
-
Ballad D H (1982) Computer vision. pp. 65-70, (Prentice Hall, Inc., Englewood Cliffs).
-
(1982)
, pp. 65-70
-
-
Ballad, D.H.1
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