Polymorphs discrimination of nickel suicides in device structure by improved analyses of low loss electron energy loss spectrum

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 46, Issue 20-24, 2007, Pages

  Asayama, Kyoichiro ^a   Hashikawa, Naoto ^a   Yamaguchi, Tadashi ^a   Terada, Shohei ^b   Mori, Hirotaro ^c  

^a RENESAS TECHNOLOGY CORP   (Japan)

^b HITACHI LTD   (Japan)

^c OSAKA UNIVERSITY   (Japan)

Author keywords

Electron energy loss spectroscopy; Low loss spectrum; Nickel suicide; Polymorphs discrimination; Semiconductor devices

Indexed keywords

ELECTRON ENERGY LOSS SPECTROSCOPY; FIELD EFFECT TRANSISTORS; SEMICONDUCTOR DEVICES; SURFACE PLASMON RESONANCE; TRANSMISSION ELECTRON MICROSCOPY;

LOW LOSS SPECTRUM; NICKEL SUICIDE; POLYMORPHS DISCRIMINATION;

NICKEL COMPOUNDS;

EID: 34547842282     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.46.L528     Document Type: Article

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