Microstructure in nonpolar m-plane GaN and AlGaN films

Journal of Crystal Growth

Volumn 298, Issue SPEC. ISS, 2007, Pages 288-292

  Nagai, T ^a   Kawashima, T ^a   Imura, M ^a   Iwaya, M ^a   Kamiyama, S ^a   Amano, H ^a   Akasaki, I ^a  

^a MEIJO UNIVERSITY   (Japan)

Author keywords

A1. m plane GaN; A3. Epitaxial lateral overgrowth (ELO); A3. Metal organic vapor phase epitaxy; B1. Group III nitrides; B3. Transmission electron microscopy (TEM)

Indexed keywords

DISLOCATIONS (CRYSTALS); GALLIUM NITRIDE; METALLORGANIC VAPOR PHASE EPITAXY; MICROSTRUCTURE; SEMICONDUCTING ALUMINUM COMPOUNDS; STACKING FAULTS; TRANSMISSION ELECTRON MICROSCOPY;

C-PLANE SLIP; DISLOCATION DENSITIES; EPITAXIAL LATERAL OVERGROWTH; EPITAXIAL LATERAL OVERGROWTH (ELO);

FILM GROWTH;

EID: 33846415834     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.10.029     Document Type: Article

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