High output power GaN-based light-emitting diodes using an electrically reverse-connected p -Schottky diode and p-InGaN-GaN superlattice

Applied Physics Letters

Volumn 93, Issue 8, 2008, Pages

  Jang, Ja Soon ^a  

^a Yeungnam University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

DEGRADATION; DIODES; ELECTROMAGNETIC WAVES; GALLIUM ALLOYS; GALLIUM NITRIDE; LIGHT EMISSION; ORGANIC LIGHT EMITTING DIODES (OLED); RELIABILITY; SCHOTTKY BARRIER DIODES; SEMICONDUCTING GALLIUM; SONOLUMINESCENCE;

P-INGAN; SCHOTTKY DIODES;

LIGHT EMITTING DIODES;

EID: 51349159577     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2977471     Document Type: Article

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