Low turn-on voltage and series resistance of polarization-induced InGaN-GaN LEDs by using p-InGaN/p-GaN superlattice

IEEE Photonics Technology Letters

Volumn 18, Issue 14, 2006, Pages 1536-1538

  Jang, Ja Soon ^a   Kim, Donghwan ^a   Seong, Tae Yeon ^a  

^a Korea University   (South Korea)

Author keywords

Index terms ingan gan superlattice; Light emitting diode (led); Oxidized ni au scheme; Polarization induced effect

Indexed keywords

ELECTRICAL MEASUREMENT; ELECTRICAL PROPERTY; GAN LEDS; HIGH STRESS; INDEX TERMS; INDEX TERMS-INGAN-GAN SUPERLATTICE; MULTIPLE QUANTUM WELLS; OUTPUT POWER; P-INGAN; PHOTON WAVELENGTH; POLARIZATION-INDUCED EFFECTS; SERIES RESISTANCES; TURN ON VOLTAGE;

DIODES; ELECTRIC PROPERTIES; GALLIUM ALLOYS; GALLIUM NITRIDE; LIGHT EMISSION; POLARIZATION; SUPERLATTICES;

LIGHT EMITTING DIODES;

EID: 34047185686     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2006.877621     Document Type: Article

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